Results 81 to 90 of about 684,244 (319)

The Influence of Field‐Assisted Sintering Technology (FAST) Temperature and Cooling Rate on the Microstructural Evolution in Gamma‐Titanium Aluminide Alloy GE4822

Advanced Engineering Materials, EarlyView.
Controlling the Field Assisted Sintering Technology (FAST) parameters, dwell temperature and cooling rate, significantly influences the microstructural evolution in titanium aluminide GE4822. Significant γ‐lamellar colonies develop only upon cooling through the α‐transus.
Jack Krohn, James Pepper, Martin Jackson
wiley   +1 more source

The LHCb Silicon Tracker [PDF]

, 2013
The LHCb experiment is designed to perform high-precision measurements of CP violation and search for New Physics using the enormous flux of beauty and charm hadrons produced at the LHC.
Tobin, M, Tobin, Mark
core   +1 more source

Modeling of nanocrystalline common-mode chokes with custom shape by simulation-based extraction of electromagnetic material properties

Power Electronic Devices and Components
Knowing the complex relative permeability and permittivity of a ferrite or nanocrystalline core material is crucial to predict the insertion impedance of common-mode chokes.
Herbert Hackl, Werner Konrad, Martin Stoiber, Christian Riener, Bernhard Auinger, Martin Heinisch   +5 more
doaj   +1 more source

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

Proceedings of the IEEE, 2009
Silicon nanocrystals (Si-nc) is an enabling material for silicon photonics, which is no longer an emerging field of research but an available technology with the first commercial products available on the market. In this paper, properties and applications of Si-nc in silicon photonics are reviewed.
Zhizhong Yuan, Aleksei Anopchenko, Nicola Daldosso, Romain Guider, Daniel Navarro-Urrios, Alessandro Pitanti, Rita Spano, Lorenzo Pavesi   +7 more
openaire   +4 more sources

Microstructure Modification of Additively Manufactured Mo–9Si–8B by Annealing and Its Effects on High‐Temperature Mechanical Properties

Advanced Engineering Materials, EarlyView.
Postbuild annealing systematically modifies the phase fractions and morphology of EB‐PBF processed Mo–9Si–8B. Quantitative microstructure–property correlations reveal how controlled phase evolution enhances high‐temperature compressive strength and creep resistance.
Christopher Schmidt, Yong Chen, Georg Hasemann, Benjamin Wahlmann, Carolin Körner, Manja Krüger   +5 more
wiley   +1 more source

Response surface analysis of rat bone composition changes by dietary calcium and silicon [PDF]

, 2003
Plan BSilicon (Si) apparently is involved in bone calcification; however, its affect appears to be related to dietary calcium. The objective of this experiment was to determine the effects of varying concentrations of dietary silicon on bone ...
McCrady, Shelly
core  

Molecular dynamics studies of ultrafast laser-induced phase and structural change in crystalline silicon [PDF]

, 2012
In this work, thermodynamic phenomena in crystalline silicon irradiated by an ultrafast laser pulse were studied using the method of molecular dynamics simulations. The Stillinger-Weber potential was used to model the crystalline silicon. The temperature
Yang, Chengjuan, Xu, Xianfan, Wang, Yaguo   +2 more
core   +2 more sources

Characterization and analysis of reverse breakdown voltage onset of solar cells with different cell architectures

EPJ Photovoltaics
In 2016 Passivated Emitter and Rear Cell (PERC) solar cells started to dominated the PV industry as cell technology. Since 2023, the prices of Tunnel Oxide Passivated Contact (TOPCon) and Heterojunction (HJT) solar cells have become lower, leading to a ...
Jaeckel Bengt, Froebel Jens, Pander Matthias, Maixner Andreas, Hanifi Hamed   +4 more
doaj   +1 more source

Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

IEEE Photonics Journal, 2019
We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 μm2, fabricated on a 400-nm silicon-on-insulator platform ...
Jia Xu Brian Sia, Wanjun Wang, Xin Guo, Jin Zhou, Zecen Zhang, Mohamed Said Rouifed, Xiang Li, Zhong Liang Qiao, Chong Yang Liu, Callum Littlejohns, Graham T. Reed, Hong Wang   +11 more
doaj   +1 more source

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

Advanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali, Magali Gregoire, Matys Guyard, Tatiana Itina, David Grojo, Pol Sopeña   +5 more
wiley   +1 more source