Results 51 to 60 of about 128,008 (303)
A Si anode comprising entangled networks of cellulose and SWCNT (C‐CNT) nanocomposites as an anode electrode for a high‐performance LIB is realized by fully utilizing the generated microstructure of a novel conductive 3D scaffold via a low‐temperature and eco‐friendly process. Additionally, localized heating via photo‐thermal conversion can be utilized
Boeun Ryu +5 more
wiley +1 more source
This study shows that lizard osteoderm capping tissue is a hyper‐mineralized hydroxyapatite layer consistently covering the superficial osteoderm surface in those species studied here, yet it varies greatly in morphology, nanostructure, and mechanical performance across species.
Adrian Rodriguez‐Palomo +10 more
wiley +1 more source
The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE
Silicon carbide is expected to be used as a next-generation material because of its more effective mechanical and electronic properties. The hetero Molecular Beam Epitaxy process may provide a method to form thin layered mono-crystal Silicon carbide on a
Akira KAKUTA +2 more
doaj +1 more source
Thin film process forms effective electrical contacts on semiconductor crystals [PDF]
Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are ...
Formigoni, N. P., Roberts, J. S.
core +1 more source
Specific heat of aluminium-doped superconducting silicon carbide
The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded
J Akimitsu +8 more
core +1 more source
Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles +16 more
wiley +1 more source
Design of SiC MOSFET half-bridge driver and protection circuit
In response to the challenges in designing silicon carbide (SiC) MOSFET driving circuits, such as high difficulty in design, susceptibility to crosstalk, incomplete protective functions, and the issue of full domestic production, a half-bridge driving ...
Zheng Gaoming +5 more
doaj +1 more source
Novel Functional Materials via 3D Printing by Vat Photopolymerization
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov +3 more
wiley +1 more source
Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells
Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular.
Walder Cordula +5 more
doaj +1 more source
Aluminum-silicon eutectic alloy improves electrical and mechanical contact to silicon carbide [PDF]
Alloy contact layer is made at relatively low temperature and has good wetting characteristics. Contacts adhere well to silicon carbide surface, penetrating about 300 to 500 angstroms into it.
Shier, J. S.
core +1 more source

