Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley +1 more source
Device Integration Technology for Practical Flexible Electronics Systems
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa +5 more
wiley +1 more source
Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites [PDF]
Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants.
A.O. Addemir +3 more
doaj
Electrophysical and optical properties of the silicon carbide device structures
The results of the research of silicon carbide thin films obtained by high-frequency magnetron sputtering on various types substrates are presented. The surface morphology of silicon carbide was studied by scanning electron microscopy.
D.Y. Golubeva, A.V. Shcherbak
doaj +1 more source
Obtaining the fine-grained silicon carbide, used in the synthesis of construction ceramics [PDF]
Silicon carbide is used in the production of construction and temperature-resistant goods, capable of withstanding high mechanical and thermal loads. During recent times, silicon carbide has been frequently used in the electronics industry.
Dubrovin, A. V. +3 more
core +1 more source
Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra +8 more
wiley +1 more source
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a ...
Zhuorui Tang +7 more
doaj +1 more source
Synthesis and Properties of Silicon Carbide (Review)
Silicon carbide is an extremely hard material that exhibits exceptional corrosion resistance as well as thermal shock resistance. Its high mechanical properties determine the increased performance of materials based on it. The combination of high thermal
L.M. Soltys +4 more
doaj +1 more source
Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors
A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi +8 more
wiley +1 more source
Fast carbidization of silicon in additive manufactured Si-C-SiC composite
Silicon carbide-based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts.
Tsovinar Ghaltaghchyan +3 more
doaj +1 more source

