Results 51 to 60 of about 1,006,667 (349)

Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley   +1 more source

Device Integration Technology for Practical Flexible Electronics Systems

open access: yesAdvanced Functional Materials, EarlyView.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa   +5 more
wiley   +1 more source

Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites [PDF]

open access: yesЖурнал нано- та електронної фізики, 2012
Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants.
A.O. Addemir   +3 more
doaj  

Electrophysical and optical properties of the silicon carbide device structures

open access: yesФизика волновых процессов и радиотехнические системы, 2019
The results of the research of silicon carbide thin films obtained by high-frequency magnetron sputtering on various types substrates are presented. The surface morphology of silicon carbide was studied by scanning electron microscopy.
D.Y. Golubeva, A.V. Shcherbak
doaj   +1 more source

Obtaining the fine-grained silicon carbide, used in the synthesis of construction ceramics [PDF]

open access: yes, 2016
Silicon carbide is used in the production of construction and temperature-resistant goods, capable of withstanding high mechanical and thermal loads. During recent times, silicon carbide has been frequently used in the electronics industry.
Dubrovin, A. V.   +3 more
core   +1 more source

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

open access: yesAdvanced Functional Materials, EarlyView.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra   +8 more
wiley   +1 more source

Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

open access: yesCase Studies in Thermal Engineering
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a ...
Zhuorui Tang   +7 more
doaj   +1 more source

Synthesis and Properties of Silicon Carbide (Review)

open access: yesФізика і хімія твердого тіла, 2023
Silicon carbide is an extremely hard material that exhibits exceptional corrosion resistance as well as thermal shock resistance. Its high mechanical properties determine the increased performance of materials based on it. The combination of high thermal
L.M. Soltys   +4 more
doaj   +1 more source

Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi   +8 more
wiley   +1 more source

Fast carbidization of silicon in additive manufactured Si-C-SiC composite

open access: yesResults in Materials
Silicon carbide-based composites are advantageous material for electronic industry. Their application is limited by the difficulty to fabricate complex structural parts.
Tsovinar Ghaltaghchyan   +3 more
doaj   +1 more source

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