Results 91 to 100 of about 2,165,490 (292)
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li +11 more
wiley +1 more source
Synthesis and reactivity of silylmethylcyclopropanes [PDF]
PhDSubstituted tetrahydrofurans (THFs) are common structural motifs found in natural products. The biological activity and structural complexity of these compounds makes their efficient construction with controlled regio- and stereochemistry a ...
Dunn, Jonathan
core +3 more sources
Active gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe ...
İlker Şahin +4 more
doaj +1 more source
Comparison of conventional and cascode drive of SiC BJTs
This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant ...
Neville McNeill +3 more
doaj +1 more source
A Wind Tunnel Experimental Study of Icing on NACA0012 Aircraft Airfoil with Silicon Compounds Modified Polyurethane Coatings. [PDF]
Przybyszewski B +7 more
europepmc +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
In regions characterised by high humidity and abundant vegetation, the external insulation materials utilised in high‐voltage transmission and transformation are frequently fouled with a multitude of microorganisms, thereby jeopardising the reliable ...
Shifang Yang +4 more
doaj +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Stimulated terahertz emission due to electronic Raman scattering in silicon [PDF]
Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range,
Pavlov, S.G. +38 more
core +2 more sources

