Results 91 to 100 of about 2,165,490 (292)

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

Synthesis and reactivity of silylmethylcyclopropanes [PDF]

open access: yes, 2011
PhDSubstituted tetrahydrofurans (THFs) are common structural motifs found in natural products. The biological activity and structural complexity of these compounds makes their efficient construction with controlled regio- and stereochemistry a ...
Dunn, Jonathan
core   +3 more sources

Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules

open access: yesIET Power Electronics
Active gate driving (AGD) is a promising concept for achieving high‐performance power transistor switching. This is particularly crucial for Silicon Carbide (SiC) MOSFETs since their inherently fast switching characteristics give rise to severe ...
İlker Şahin   +4 more
doaj   +1 more source

Comparison of conventional and cascode drive of SiC BJTs

open access: yesThe Journal of Engineering, 2019
This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant ...
Neville McNeill   +3 more
doaj   +1 more source

A Wind Tunnel Experimental Study of Icing on NACA0012 Aircraft Airfoil with Silicon Compounds Modified Polyurethane Coatings. [PDF]

open access: yesMaterials (Basel), 2021
Przybyszewski B   +7 more
europepmc   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi   +3 more
wiley   +1 more source

Microbial adhesion and nanocomposite‐loaded antifouling applications of insulating polymers in transmission lines‐a review

open access: yesIET Nanodielectrics
In regions characterised by high humidity and abundant vegetation, the external insulation materials utilised in high‐voltage transmission and transformation are frequently fouled with a multitude of microorganisms, thereby jeopardising the reliable ...
Shifang Yang   +4 more
doaj   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Stimulated terahertz emission due to electronic Raman scattering in silicon [PDF]

open access: yes, 2009
Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range,
Pavlov, S.G.   +38 more
core   +2 more sources

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