Results 1 to 10 of about 14,565 (118)

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs [PDF]

Discover Nano
This paper systematically investigates the thermal failure mechanisms of 14 nm Ferro-FinFETs using the TCAD tools, incorporating both Preisach and thermodynamic models.
Wenxuan Ma, Yue Peng, Qiuxia Wu, Shuo Zhang, Litao Sun, Wenwu Xiao, Chunfu Zhang, Xiaohua Ma, Yue Hao   +8 more
doaj   +2 more sources

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

AIP Advances, 2015
We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory.
Zheng Huang, Tie-Yu Lü, Hui-Qiong Wang, Jin-Cheng Zheng   +3 more
doaj   +2 more sources

Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications

IEEE Journal of the Electron Devices Society, 2021
We experimentally demonstrate ferroelectric-like non-volatile field-effect transistor (NVFET) with the amorphous Al2O3 gate insulator for artificial synapse applications.
Yue Peng, Guoqing Zhang, Wenwu Xiao, Fenning Liu, Yan Liu, Guosheng Wang, Shulong Wang, Xiao Yu, Genquan Han, Yue Hao   +9 more
doaj   +1 more source

ZnS/ZnO heterostructure semiconductor: A promising ionic liquid media approach without calcination [PDF]

Journal of Particle Science and Technology, 2022
ZnS is a wide band gap semiconductor with excellent optical and electrical properties whose electronic structure can be modified with other semiconductors.
Shabnam Sheshmani, Mahan Mardali, Ashraf S. Shahvelayati, Leila Hajiaghababaei   +3 more
doaj   +1 more source

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Nanoscale Research Letters, 2022
We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V G) pulses.
Yue Peng, Wenwu Xiao, Guoqing Zhang, Genquan Han, Yan Liu, Yue Hao   +5 more
doaj   +1 more source

1 kW MHz Wideband Class E Power Amplifier

IEEE Open Journal of Power Electronics, 2022
Class E power amplifiers are widely used in high-frequency applications due to their simplicity and use of only one ground-referenced switch. However, Class E power amplifiers are usually tuned to operate at a fixed frequency due to their resonant nature.
Jiale Xu, Zikang Tong, Juan Rivas-Davila
doaj   +1 more source

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3

AIP Advances, 2020
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and
Jibran Hussain, Haris Naeem Abbasi, Wei Wang, Yan-Feng Wang, Ruozheng Wang, Hong-Xing Wang   +5 more
doaj   +1 more source

A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development

IET Power Electronics, 2023
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switching frequencies, and
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert   +6 more
doaj   +1 more source

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

AIP Advances, 2017
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu, Jibran Hussain Mirani, Jiao Fu, Zongchen Liu, Hongxing Wang   +4 more
doaj   +1 more source

Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators

AIP Advances, 2017
The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu, Jiao Fu, Zongchen Liu, Jibran Hussain Mirani, Hongxing Wang   +4 more
doaj   +1 more source