Results 41 to 50 of about 14,007 (255)
CES Transactions on Electrical Machines and Systems, 2017 Citations Keywords Metrics Abstract: The rapid pace of change in the wide band gap (WBG) power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.
Peter R. Wilson
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Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
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Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Advanced Functional Materials, EarlyView.Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
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IET Power Electronics, 2023 This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process.
Miao Cui +10 more
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Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
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New Journal of PhysicsLong-range chiral interactions are very attractive due to their potential applications in quantum simulation and quantum information processing. Here we propose and analyze a novel spin-mechanical hybrid quantum device for designing and engineering ...
Bo Li +5 more
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Nature Communications, 2017 Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve ...
Teodor K. Todorov +8 more
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Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
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Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process
Advances in Condensed Matter Physics, 2019 As an indirect band gap semiconductor, germanium (Ge) can be transformed into a direct band gap semiconductor through some specific modified methods, stress, and alloying effect. Direct band gap-modified Ge semiconductors with a high carrier mobility and
Xiaohuan Xue, Jianjun Song, Rongxi Xuan
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Advanced Functional Materials, EarlyView.Sulfur‐doped graphitized carbon nanofibers act as adaptive catalyst–support platforms, enabling dynamic sulfur‐mediated reconstruction and strong metal–support interactions. This unique behavior enhances catalyst stability and controls reaction pathways, achieving highly selective urea oxidation (∼92% N2) coupled with efficient hydrogen evolution ...
Melanie Guillén‐Soler +4 more
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