Results 41 to 50 of about 5,137,929 (150)
Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process
Advances in Condensed Matter Physics, 2019 As an indirect band gap semiconductor, germanium (Ge) can be transformed into a direct band gap semiconductor through some specific modified methods, stress, and alloying effect. Direct band gap-modified Ge semiconductors with a high carrier mobility and
Xiaohuan Xue, Jianjun Song, Rongxi Xuan
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Solar-blind UV detectors based on wide band gap semiconductors
, 2013 Solid-state photon detectors based on wide band gap semiconductors are not yet considered mature technology but their current development opens new possibilities, also for space observations.
Jean-François Hochedez +3 more
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IEEE Journal of the Electron Devices Society, 2020 GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration.
Ying Wang +5 more
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Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs During Pulse-Mode Operation
IEEE Journal of the Electron Devices Society, 2017 The on-resistance (RON) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation.
Alessandro Chini, Ferdinando Iucolano
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New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors
, 2017 At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm2/V-s at 145 and 205 °C, respectively.
Cheng Wei Shih (2888054) +1 more
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Fingerprinting quantum emitters in hexagonal boron nitride using strain
Physical Review Research, 2020 Two-dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide-band-gap semiconductors as hosts of single-photon emitters.
Pratibha Dev
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Elastic anisotropy and electronic properties of Si3N4 under pressures
AIP Advances, 2016 First principles calculations are performed to systematically investigate the electronic structures, elastic, anisotropic and electronic properties of the monoclinic, tetragonal and orthorhombic structures of Si3N4 under pressure. Anisotropy studies show
Qingyang Fan +4 more
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First-principles study of defects in wide band gap semiconductors [PDF]
, 2019 Wide band gap semiconductors typically exhibit a band gap of more than 2eV and are technologically important for various applications. Such materials are essential for the development of high power, high temperature, and high frequency applications ...
Kyrtsos, Alexandros Andreas
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Naturally occurring 2D semiconductor with antiferromagnetic ground state
npj 2D Materials and ApplicationsThe natural clay mineral vermiculite has been overlooked as a promising candidate for scalable production of large aspect ratio 2D wide band-gap semiconductors.
Barbara Pacakova +10 more
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, 2022 Semiconductors have unique electrical properties such as variable electrical conductivity through doping, making them an essential component of modern electronics.
Chae, Sieun
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