Results 51 to 60 of about 14,007 (255)

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

Advanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar, Fumikazu Murakami, Xing He, Konnor Koons, Xinyan Li, Bumseop Kim, Shihan Qin, Varun Harbola, Jochen Mannhart, Yimo Han, Ruijuan Xu, Shengxi Huang, Andrew M. Rappe, Hanyu Zhu   +13 more
wiley   +1 more source

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

IEEE Journal of the Electron Devices Society, 2020
GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration.
Ying Wang, Liu-An Li, Chong Li, Jin-Ping Ao, Xiao Wang, Yue Hao   +5 more
doaj   +1 more source

Effect of Optical Illumination on Bubble Nanodomains

Advanced Functional Materials, EarlyView.
Stable surface‐confined nanoscale bubble domains are created and manipulated in PMN‐PT single crystals. Under above‐bandgap illumination, these bubble nanodomains remain unchanged. However, upon illumination cessation, they rapidly expand to switch the entire crystal surface, due to the accumulation of a large reservoir of electrons at the crystal ...
Haoze Zhang, Anju Ahlawat, Richard F. Webster, Yunlong Sun, Dinesh Shukla, Danyang Wang, Jan Seidel, Alexei Gruverman, Pankaj Sharma   +8 more
wiley   +1 more source

Experimental and Numerical Evaluation of R_ON Degradation in GaN HEMTs During Pulse-Mode Operation

IEEE Journal of the Electron Devices Society, 2017
The on-resistance (RON) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation.
Alessandro Chini, Ferdinando Iucolano
doaj   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source

Fingerprinting quantum emitters in hexagonal boron nitride using strain

Physical Review Research, 2020
Two-dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide-band-gap semiconductors as hosts of single-photon emitters.
Pratibha Dev
doaj   +1 more source

Fusogenic RNA Nanomodules for Fusion‐Mediated and Multiplexed siRNA Delivery

Advanced Functional Materials, EarlyView.
A fusogenic lipid‐layered RNA nanomodules (L‐CRAMs) enable high‐capacity and long‐lasting siRNA delivery through membrane fusion. These nanomodules carry exceptionally large siRNA payloads, avoid conventional endosomal uptake, and release multiple functional siRNAs through Dicer‐mediated processing.
Sunghyun Moon, Iksoo Jang, Taehyeon Kim, Nayoung Yoon, Kyuha Yum, Jong Bum Lee   +5 more
wiley   +1 more source

Elastic anisotropy and electronic properties of Si3N4 under pressures

AIP Advances, 2016
First principles calculations are performed to systematically investigate the electronic structures, elastic, anisotropic and electronic properties of the monoclinic, tetragonal and orthorhombic structures of Si3N4 under pressure. Anisotropy studies show
Qingyang Fan, Changchun Chai, Qun Wei, Peikun Zhou, Yintang Yang   +4 more
doaj   +1 more source

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

Advanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal, Emmeline G. Poole, Jacob Plowman, Troy D. Manning, Teresa Partida Manzanera, Kevin Sanderson, Matthew S. Dyer, Matthew J. Rosseinsky, Jonathan Alaria   +8 more
wiley   +1 more source

Naturally occurring 2D semiconductor with antiferromagnetic ground state

npj 2D Materials and Applications
The natural clay mineral vermiculite has been overlooked as a promising candidate for scalable production of large aspect ratio 2D wide band-gap semiconductors.
Barbara Pacakova, Bera Lahtinen-Dahl, Alexsandro Kirch, Hanna Demchenko, Veslemoy Osmundsen, Chloe A. Fuller, Dmitry Chernyshov, Dominika Zakutna, Caetano R. Miranda, Steinar Raaen, Jon Otto Fossum   +10 more
doaj   +1 more source