Results 51 to 60 of about 5,137,929 (150)
Atomically thin mononitrides SiN and GeN: New two-dimensional wide band gap semiconductors
, 2018 To match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry, low-dimensional Si-based semiconductors maybe are the best candidates.
Kaiming Deng +5 more
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Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor
IET Power ElectronicsSilicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity ...
Hangzhi Liu +3 more
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Electronics LettersWe report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐
Sandeep K. Chaudhuri +4 more
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Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC
IET Power ElectronicsThis article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results,
Lukas Bergmann, Mark‐M. Bakran
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Electron–phonon coupling in semiconductors within the GW approximation
New Journal of Physics, 2018 The magnitude of the renormalization of the band gaps due to zero-point motions of the lattice is calculated for 18 semiconductors, including diamond and silicon.
Ferenc Karsai +3 more
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New Journal of Physics, 2020 In magnetic semiconductors the optical spectrum and, in particular, the absorption edge representing the band-gap are strongly affected by the onset of the magnetic order. This contribution to the band-gap energy has hitherto been described theoretically
D Bossini +6 more
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STRUCTURAL CHARACTERISATION AND OPTICAL PROPERTIES OF ALUMINUM-DOPED ZINC OXIDE NANOFIBERS SYNTHESIZED BY ELECTROSPINNING [PDF]
Journal of Engineering Science and Technology, 2018 Nanostructured zinc oxide (ZnO) materials have been of interest for researchers because of their elemental abundance, nontoxicity, and wide range of applications. Furthermore, ZnO characteristics can be tuned via doping (e.g.
BAYU SUTANTO, ZAINAL ARIFIN, SUYITNO
doaj
Transport Properties of Wide Band Gap Semiconductors
, 2004 Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap ...
Tirino, Louis
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Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet
, 2016 Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S.
Joshua A. Warren (1662667) +6 more
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Theory of Defects in Wide-Band-Gap Semiconductors
, 1995 We discuss the application of state-of-the-art first-principles calculations to the problem of defects, impurities, and doping levels in semiconductors.
Chris G Van de Walle, Jörg Neugebauer
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