Results 61 to 70 of about 14,007 (255)

Stacking Fault Complexions in AgSbTe2 Thermoelectrics With Enhanced Electrical Conductivity

Advanced Functional Materials, EarlyView.
Atomic‐scale characterization resolves stacking fault complexion in AgSbTe2, showing Te and Sb segregation along with lattice dilation. Their enhanced effects on phonon scattering are modeled analytically. Although most defects also impede electron transport, local four‐point‐probe measurements reveal higher electrical conductivity at stacking fault ...
Lamya Abdellaoui, Hanna Bishara, Eleonora Isotta, Cynthia Rodenkirchen, Sergei Grazhdannikov, Yuan Yu, Ruben Bueno‐Villoro, Chanwon Jung, G. Jeffrey Snyder, Baptiste Gault, Yaron Amouyal, Oana Cojocaru‐Mirédin, Christina Scheu, Siyuan Zhang   +13 more
wiley   +1 more source

Synergistic Solar Interfacial Evaporation and Photocatalysis Enabled by a Hierarchical Porous Hydrogel Reactor

Advanced Functional Materials, EarlyView.
A tree‐inspired hydrogel interfacial reactor couples solar evaporation with photocatalysis for simultaneous desalination and waste water treatment. The bilayer design achieves 2.14 kg·m−2·h−1 evaporation rate with 79% dye degradation under one sun, demonstrating that photothermal heating and evaporation induced pollutant enrichment create a self ...
Yan Zhao, Xiaolong Ma, Zihong Wu, Muhammad Amjad, Dongsheng Wen   +4 more
wiley   +1 more source

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

IET Power Electronics
Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity ...
Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang   +3 more
doaj   +1 more source

Programmable 2D Magnetic Clusterphenes With High Curie Temperature and Strong Magnetic Anisotropy via Cluster Assembly and Ligand Synergy

Advanced Functional Materials, EarlyView.
Programmable 2D magnetic clusterphenes are realized through a ligand‐mediated cluster‐assembly strategy. Direct linking of magnetic superatomic clusters enhances electron delocalization and symmetry breaking, enabling the concurrent strengthening of magnetic exchange interactions and spin–orbit coupling.
Junxiang Fu, Zhuohang Fang, Haidi Wang, Ye Yang, Weiduo Zhu, Weiwei Chen, Yu Zhang, Haixiao Xiao, Zhao Chen, Hongyan Lv, Xiaofeng Liu, Xiangyang Li, Xiao Cheng Zeng, Zhongjun Li   +13 more
wiley   +1 more source

Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Electronics Letters
We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐
Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal   +4 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

IET Power Electronics
This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results,
Lukas Bergmann, Mark‐M. Bakran
doaj   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Electron–phonon coupling in semiconductors within the GW approximation

New Journal of Physics, 2018
The magnitude of the renormalization of the band gaps due to zero-point motions of the lattice is calculated for 18 semiconductors, including diamond and silicon.
Ferenc Karsai, Manuel Engel, Espen Flage-Larsen, Georg Kresse   +3 more
doaj   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source