Results 71 to 80 of about 5,137,929 (150)
University Concert Band, University Symphonic Band, November 13, 1980
, 2019 Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan on November 13, 1980, 8:00 p.m., program no.
Western Michigan University. Concert Band
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Computational Materials TodayThe surface energy and band gap of inorganic semiconductors are essential properties for a wide variety of applications in materials science, and studying morphologies holds significant importance. However, it is challenging to find a correlation between
Amanda F. Gouveia +4 more
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Nanoscale Research Letters, 2009 The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass ...
Song XM +6 more
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Charge neutrality level in significantly cation-anion mismatched semiconductors [PDF]
The fundamental bulk and surface electronic properties of a novel class of semiconductors, characterised by a significant mismatch between the size and electro-negativity of the cation and anion (SCAMS), have been investigated.
King, Philip David
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Limits to Doping of Wide Band Gap Semiconductors
, 2015 Limits to Doping of Wide Band Gap ...
John Buckeridge (1298874) +10 more
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Artificial photosynthesis, highly efficient sensitization of wide band gap semiconductors
, 2017 The sensitization of semiconductors is a fascinating domain of present research which has found important applications in different areas such as artificial photosynthesis.
Michael Grätzel
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University Concert Band, University Symphonic Band, February 17, 1980
, 2018 Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 17, 1980, program no. 205 of the Department of Music's 1979-1980 season.University Concert Band, Gregory Talford, conductor (1st-4th works)
Western Michigan University. Concert Band
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Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
, 2002 Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of ...
Lebedev, A.A., +6 more
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Extreme-band-gap semiconductors with shallow dopants and mobile carriers
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classified as insulators.
Jon Lafuente-Bartolome +10 more
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AN INVESTIGATION OF TRANSPARENT WIDE BAND GAP SEMICONDUCTORS**
, 2019 Solution processable optically transparent semiconductors have numerous optoelectronic applications. Copper (I) iodide (CuSCN) and Copper (I) thiocyanate (CuSCN) are both p-type semiconductors having direct band gap of 3.2 and 3.9 eV respectively ...
Morris, Nicole +3 more
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