Results 31 to 40 of about 14,007 (255)

Analytical Loss Model for Three-Phase 1200V SiC MOSFET Inverter Drive System Utilizing Miller Capacitor-Based dv/dt-Limitation

IEEE Open Journal of Power Electronics, 2022
Next-generationVariable Speed Drive (VSD) systems utilize SiC MOSFETs to achieve both high efficiency through reduced bridge-leg losses and high power density through an order-of-magnitude increase in switching frequency or reduction of the DC-link ...
Michael Haider, Simon Fuchs, Grayson Zulauf, Dominik Bortis, Johann W. Kolar, Yasuo Ono   +5 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Temperature-driven kinetic-to-diffusion transition governing crystallization and texture evolution in sputtered YSZ thin films

Results in Physics
The crystallization behavior and texture evolution of RF magnetron sputtered yttria-stabilized zirconia (YSZ) thin films on Si(100) were systematically investigated with emphasis on the governing growth physics.
Jiao Fu, Kang Wang, Yinlong Hou, Fengnan Li, Ruozheng Wang, Jie Li, Yani Yang, Yongchang Chang, Yankun Wu, Qin Lu, Hongxing Wang   +10 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Study on Electrical and Temperature Characteristics of β-Ga₂O₃-Based Diodes Controlled by Varying Anode Work Function

Nanomaterials
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs)
Yunlong He, Baisong Sheng, Xiaoli Lu, Guran Chen, Peng Liu, Ying Zhou, Xichen Wang, Weiwei Chen, Lei Wang, Jun Yang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

Advanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón, Maksim Lednev, Jorge Cuadra, Raúl Gago, Luis Viña, Francisco José García Vidal, Johannes Feist, Ferry Prins, Carlos Antón Solanas   +8 more
wiley   +1 more source

A Single Stage Common Ground Three-Level PV Inverter With Integrated Power Decoupling

IEEE Open Journal of Power Electronics, 2020
In this paper, a T-type common ground transformer-less single phase inverter with dynamic swing of the dc-link voltage is presented for photovoltaic (PV) application. The topology is a combination of a bi-directional, partial-power-processing boost stage
Yinglai Xia, Jinia Roy, Raja Ayyanar
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Advances in Condensed Matter Physics, 2014
Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole)
Valeri V. Afanas'ev
doaj   +1 more source