Results 31 to 40 of about 5,137,929 (150)
A Single Stage Common Ground Three-Level PV Inverter With Integrated Power Decoupling
IEEE Open Journal of Power Electronics, 2020 In this paper, a T-type common ground transformer-less single phase inverter with dynamic swing of the dc-link voltage is presented for photovoltaic (PV) application. The topology is a combination of a bi-directional, partial-power-processing boost stage
Yinglai Xia, Jinia Roy, Raja Ayyanar
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Advances in Condensed Matter Physics, 2014 Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole)
Valeri V. Afanas'ev
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CES Transactions on Electrical Machines and Systems, 2017 Citations Keywords Metrics Abstract: The rapid pace of change in the wide band gap (WBG) power semiconductor area has led to an explosion in potential uses for WBG devices in a huge variety of applications.
Peter R. Wilson
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Implanted Impurities in Wide Band Gap Semiconductors
, 2011 Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices.
K. Lorenz, P. Keßler, R. Vianden
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Material Descriptors to Predict Thermoelectric Performance of Narrow-gap Semiconductors and Semimetals [PDF]
, 2022 Thermoelectric (TE) cooling is an environment-friendly alternative to vapor compression cooling. Narrow-gap semiconductors and semimetals have garnered interest for Peltier cooling, especially following the discovery of Mg3Bi2-based materials.
Adam N., Carranco +3 more
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Wide band gap based MEMS for harsh environment applications
, 2022 S.2-9With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention.
Brueckner, K. +8 more
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IET Power Electronics, 2023 This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process.
Miao Cui +10 more
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Numerical study of Bloch electron dynamics in wide band-gap semiconductors
, 2001 In this paper, we are using numerical calculations to demonstrate the importance of band to band tunneling in wide band-gap semiconductors. We have considered 4H-SiC, 3C-SiC and wurtzite GaN as prototype semiconductors in the demonstration. Wide band-gap
Martinez, A., +5 more
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New Journal of PhysicsLong-range chiral interactions are very attractive due to their potential applications in quantum simulation and quantum information processing. Here we propose and analyze a novel spin-mechanical hybrid quantum device for designing and engineering ...
Bo Li +5 more
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Nature Communications, 2017 Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve ...
Teodor K. Todorov +8 more
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