Results 21 to 30 of about 5,137,929 (150)

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

AIP Advances, 2015
The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs.
Liefeng Feng, Xiufang Yang, Yang Li, Ding Li, Cunda Wang, Dongsheng Yao, Xiaodong Hu, Hongru Li   +7 more
doaj   +1 more source

Electronic materials with a wide band gap: recent developments

IUCrJ, 2014
The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV) after World War II.
Detlef Klimm
doaj   +1 more source

A Review on Oxygen-Deficient Titanium Oxide for Photocatalytic Hydrogen Production

Metals, 2023
Photocatalytic technology based on the specific band structure of semiconductors offers a promising way to solve the urgent energy and environmental issues in modern society.
Yan Chen, Xiuli Fu, Zhijian Peng
doaj   +1 more source

High temperature optical absorption investigation into the electronic transitions in sol–gel derived C12A7 thin films [PDF]

, 2015
Optical absorption into 6 mm thick sol–gel derived films, annealed at 1300 °C of 12CaO·7Al2O3 calcium aluminate binary compound on MgO〈100〉 single crystal substrates was studied at temperatures ranging from room temperature to 300 °C.
Feizi, E, Ray, AK, Asim K. Ray, Elnaz Feizi   +3 more
core   +1 more source

Band Gap Tuning in Transition Metal and Rare-Earth-Ion-Doped TiO₂, CeO₂, and SnO₂ Nanoparticles

Nanomaterials, 2022
The energy gap Eg between the valence and conduction bands is a key characteristic of semiconductors. Semiconductors, such as TiO2, SnO2, and CeO2 have a relatively wide band gap Eg that only allows the material to absorb UV light.
Iliana Apostolova, Angel Apostolov, Julia Wesselinowa   +2 more
doaj   +1 more source

Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3

APL Materials, 2023
Gallium oxide (Ga2O3) is a promising semiconductor for next-generation high-power electronics due to its ultra-wide bandgap and high critical breakdown field.
Channyung Lee, Nathan D. Rock, Ariful Islam, Michael A. Scarpulla, Elif Ertekin   +4 more
doaj   +1 more source

Photocatalytic Applications of ReS₂-Based Heterostructures

Molecules, 2023
ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years.
Nan Wang, Yashu Li, Lin Wang, Xuelian Yu
doaj   +1 more source

Analytical Loss Model for Three-Phase 1200V SiC MOSFET Inverter Drive System Utilizing Miller Capacitor-Based dv/dt-Limitation

IEEE Open Journal of Power Electronics, 2022
Next-generationVariable Speed Drive (VSD) systems utilize SiC MOSFETs to achieve both high efficiency through reduced bridge-leg losses and high power density through an order-of-magnitude increase in switching frequency or reduction of the DC-link ...
Michael Haider, Simon Fuchs, Grayson Zulauf, Dominik Bortis, Johann W. Kolar, Yasuo Ono   +5 more
doaj   +1 more source

Temperature-driven kinetic-to-diffusion transition governing crystallization and texture evolution in sputtered YSZ thin films

Results in Physics
The crystallization behavior and texture evolution of RF magnetron sputtered yttria-stabilized zirconia (YSZ) thin films on Si(100) were systematically investigated with emphasis on the governing growth physics.
Jiao Fu, Kang Wang, Yinlong Hou, Fengnan Li, Ruozheng Wang, Jie Li, Yani Yang, Yongchang Chang, Yankun Wu, Qin Lu, Hongxing Wang   +10 more
doaj   +1 more source

Study on Electrical and Temperature Characteristics of β-Ga₂O₃-Based Diodes Controlled by Varying Anode Work Function

Nanomaterials
This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-Ga2O3-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs)
Yunlong He, Baisong Sheng, Xiaoli Lu, Guran Chen, Peng Liu, Ying Zhou, Xichen Wang, Weiwei Chen, Lei Wang, Jun Yang, Xuefeng Zheng, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source