Results 21 to 30 of about 14,007 (255)
Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors
Energies, 2018 In this short communication, we conducted first-principles calculations to explore the stability of boron monochalcogenides (BX, X = S, Se or Te), as a new class of two-dimensional (2D) materials.
Bohayra Mortazavi, Timon Rabczuk
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AIP Advances, 2015 The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs.
Liefeng Feng +7 more
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Electronic materials with a wide band gap: recent developments
IUCrJ, 2014 The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV) after World War II.
Detlef Klimm
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A Review on Oxygen-Deficient Titanium Oxide for Photocatalytic Hydrogen Production
Metals, 2023 Photocatalytic technology based on the specific band structure of semiconductors offers a promising way to solve the urgent energy and environmental issues in modern society.
Yan Chen, Xiuli Fu, Zhijian Peng
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Band Gap Tuning in Transition Metal and Rare-Earth-Ion-Doped TiO2, CeO2, and SnO2 Nanoparticles
Nanomaterials, 2022 The energy gap Eg between the valence and conduction bands is a key characteristic of semiconductors. Semiconductors, such as TiO2, SnO2, and CeO2 have a relatively wide band gap Eg that only allows the material to absorb UV light.
Iliana Apostolova +2 more
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Wide band-gap power semiconductor devices
IET Circuits, Devices & Systems, 2007 The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
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Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3
APL Materials, 2023 Gallium oxide (Ga2O3) is a promising semiconductor for next-generation high-power electronics due to its ultra-wide bandgap and high critical breakdown field.
Channyung Lee +4 more
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Photocatalytic Applications of ReS2-Based Heterostructures
Molecules, 2023 ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years.
Nan Wang, Yashu Li, Lin Wang, Xuelian Yu
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Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
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