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2010
Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
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Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
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Silicon and Silicon Dioxide Thermal Bonding
MRS Proceedings, 1987AbstractThe quality of the bond produced after mating oxidized and/or unoxidized silicon wafers has been studied using acoustic microscopy, infrared transmission thermographs, and transmission electron microscopy. The acoustic microscopy revealed that a significant number of unbonded regions (gaps) remain at the bond interface after bonding in oxygen ...
Robert D. Black +5 more
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Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures
MRS Proceedings, 1992ABSTRACTAmorphous insulator/amorphous silicon structures show, under bias-stress conditions, a drift of the electrical characteristics. In the present work, in order to discriminate the main source of instability in amorphous silicon dioxide/amorphous silicon Thin-Film Transistors, the determination of both threshold voltage and flat-band voltage has ...
G Fortunato, L Mariucci
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Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
Journal of Applied Physics, 1985Electron heating in silicon dioxide (SiO2) at electric fields ≲5 MV/cm is demonstrated using three different experimental techniques: carrier separation, electroluminescence, and vacuum emission. Gradual heating of the electronic carrier distribution is demonstrated for fields from 5 to 12 MV/cm with the average excess energy of the distribution ...
D. J. DiMaria +5 more
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IEEE Transactions on Electron Devices, 1987
A novel permeable-base device that is a type of solid-state analog to the vacuum tube has been-constructed using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide. The base or grid, which is formed from thin patterned polycrystalline silicon with degenerate doping, is separated from a single-crystal silicon substrate that ...
D.J. DiMaria, M. Arienzo
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A novel permeable-base device that is a type of solid-state analog to the vacuum tube has been-constructed using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide. The base or grid, which is formed from thin patterned polycrystalline silicon with degenerate doping, is separated from a single-crystal silicon substrate that ...
D.J. DiMaria, M. Arienzo
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Applied Surface Science, 1997
Abstract The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the ...
A. Sandhu +7 more
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Abstract The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the ...
A. Sandhu +7 more
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The silicon-silicon dioxide system
Proceedings of the IEEE, 1969Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by ...
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Silicon-dioxide electret transducer
The Journal of the Acoustical Society of America, 1984A new type of electret transducer based on the use of an SiO2 backplate electret is presented. Frequency-response measurements on a prototype device demonstrate the feasibility of the design. Possible improvements and the main advantages of the new transducer principle are discussed.
D. Hohm, R. Gerhard-Multhaupt
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Silicon Nitride-Silicon Dioxide Combinations
1971While it would be desirable to replace completely SiO2 by Si3N4, such structures exhibit hysteresis in surface behavior and charge instability due to the high number of surface charges, tunneling and trapping at the Si-Si3N4 interface as noted in the previous sections of this survey.
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2017
<div class="section abstract"> <div class="htmlview paragraph">This specification and its supplementary detail specifications cover silicon dioxide in the form of a white, amorphous powder.</div></div>
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<div class="section abstract"> <div class="htmlview paragraph">This specification and its supplementary detail specifications cover silicon dioxide in the form of a white, amorphous powder.</div></div>
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