Results 61 to 70 of about 188,897 (304)

Process facilitates photoresist mask alignment on SiC crystals [PDF]

, 1967
Growth of silicon dioxide on a silicon carbide crystal ensures proper orientation of photoresist masks on the crystals used for semiconductor devices.
Formigoni, N. P., Roberts, J. S.
core   +1 more source

Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies

, 2012
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way.
A. Dierlamm, A. Ritter, Allison, H.-J. Simonis, M. Guthoff, M. Schmanau, O. Brovchenko, Ruckman, Stanic, T. Müller, W. de Boer   +10 more
core   +1 more source

Parameter Variation in Planetary Ball Milling of Titanium Aluminide Powder in XHV‐Adequate Atmosphere

Advanced Engineering Materials, EarlyView.
This study investigates the effects of milling parameters, including rotational speed, milling duration, and ball‐to‐powder ratio, on TiAl particle size and morphology in an XHV‐equivalent atmosphere. The creation of oxide‐free surfaces enhances the mechanical properties of green bodies.
Jytte Möckelmann, Armin Piwek, Julius Peddinghaus, Kai Brunotte, Bernd-Arno Behrens   +4 more
wiley   +1 more source

Copper Nanocrystallization in Anodic Oxide Films of Ti–Cu‐Based Bulk Metallic Glass and Its Effect on the Corrosion Resistance and Cytocompatibility

Advanced Engineering Materials, EarlyView.
Viktoriia Shtefan, Thorgund Nemec, Ute Hempel, Annett Gebert and coworkers demonstrate that anodic treatment of Ti–Cu‐based metallic glass in a nontoxic pyrophosphate electrolyte forms a protective bilayered Ti/Zr‐oxide film enriched with Cu nanocrystals.
Viktoriia Shtefan, Nora Fernández Navas, Thorgund Nemec, Ivan Kaban, Ute Hempel, Andrea Voss, Volker Hoffmann, Darius Pohl, Annett Gebert   +8 more
wiley   +1 more source

EFFECT OF SUNLIGHT ON THE ELECTRICAL CHARACTERISTICS OF THE HETEROSTRUCTURE TITANIUM DIOXIDE/SILICON

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
Electrical characteristics of the heterostructure titanium dioxide/silicon illuminated by the sun light were theoretically modeled. The modeling process includes consideration of generation of the charge carriers and their transport through the ...
A. A. Kuraptsova, A. L. Danilyuk, A. A. Leshok, V. E. Borisenko   +3 more
doaj   +1 more source

Biodegradable and Recyclable Luminescent Mixed‐Matrix‐Membranes, Hydrogels, and Cryogels based on Nanoscale Metal‐Organic Frameworks and Biopolymers

Advanced Functional Materials, EarlyView.
The study presents biodegradable and recyclable mixed‐matrix membranes (MMMs), hydrogels, and cryogels using luminescent nanoscale metal‐organic frameworks (nMOFs) and biopolymers. These bio‐nMOF‐MMMs combine europium‐based nMOFs as probes for the status of the materials with the biopolymers agar and gelatine and present alternatives to conventional ...
Moritz Maxeiner, Julian Burkhart, Kateryna Borysova, Chiara Mazzariol, Klaus Müller‐Buschbaum   +4 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

An Analytical Model of Joule Heating in Piezoresistive Microcantilevers

Sensors, 2010
The present study investigates Joule heating in piezoresistive microcantilever sensors. Joule heating and thermal deflections are a major source of noise in such sensors.
Chongdu Cho, Mohd Zahid Ansari
doaj   +1 more source