Results 81 to 90 of about 188,897 (304)

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

From conventional membrane electrodes to ion-sensitive field-effect transistors [PDF]

, 1979
The theory concerning conventional membrane electrodes is often used as a starting point for the theoretical description of the operation of an ion-sensitive field-effect transistor.
Bergveld, P., Rooij, N.F. de
core   +2 more sources

Surface Passivation of HgTe Nanocrystals Enabling EG/2 Open‐Circuit Voltage and Their Coupling to Dielectric Cavity for Narrow Detection

Advanced Materials, EarlyView.
This article explores how the integration of a thin shell, combined with optimized surface chemistry, enables the design of photodiodes based on short‐wave infrared HgTe nanocrystals. These photodiodes achieve an open‐circuit voltage greater than half the optical bandgap, which drastically reduces dark current. The article also explores the integration
Albin Colle, Clement Gureghian, Dario Mastrippolito, Mariarosa Cavallo, Jiho Roh, Marco Paye, Tommaso Gemo, Diogo Almeida, Adrien Khalili, Yoann Prado, Xavier Lafosse, Sandrine Ithurria, Mathieu G. Silly, Pavel Dudin, James K. Utterback, José Avila, Debora Pierucci, Emmanuel Lhuillier   +17 more
wiley   +1 more source

The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters.
Kulinich O. A., Smyntyna V. A.,, Glauberman M. A., Chemeresyuk G. G., Yatsunskiy I. R.   +4 more
doaj  

Photonic Crystal Cavities in Silicon Dioxide

, 2009
One dimensional nano-beam photonic crystal cavities fabricated in silicon dioxide are considered in both simulation and experiment. Quality factors of over 10^4 are found via simulation, while quality factors of over 5*10^3 are found in experiment, for ...
Gong, Yiyang, Vuckovic, Jelena
core   +2 more sources

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors

Advanced Materials, EarlyView.
The open‐shell nature of diradicals facilitates charge separation, and compounds with moderate diradical character demonstrate remarkable potential in organic field‐effect transistors (OFET) applications due to their low reorganization energies for hole and electron transport.
Xiao‐Xu Liu, Lianghui Li, Xin Li, Can Chen, Man Li, Shun Tian, Paul J. Dyson, Ying‐Feng Han   +7 more
wiley   +1 more source

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

Advanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins, Jeferson Luiz Gogola, Ava Gevaerd, Cristiane Kalinke, Paulo Roberto de Oliveira, Fabio Roberto Caetano, Bruno Campos Janegitz, Márcio Fernando Bergamini, Luiz Humberto Marcolino‐Junior   +8 more
wiley   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source

Plastic deformation in nanostructure silicon formation [PDF]

Технологія та конструювання в електронній апаратурі, 2011
The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper.
V. A. Smyntyna, O. A. Kulinich, I. R. Yatsunkiy, I. A. Marchuk   +3 more
doaj   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

Advanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen, Gustavo A. Alvarez, Jeffrey Z. Kaaret, Patrick Soucy, Amir F. Amhaz, Jeffrey Moses, Kenneth R. Beyerlein, Nicole A. Benedek, Zhiting Tian, Ankit S. Disa   +9 more
wiley   +1 more source