Results 91 to 100 of about 895,861 (254)
A microfluidic device with monolithically integrated nanostructures enables high‐throughput wounding of the cell membrane and nuclear envelope. The spatial distribution of charged multivesicular body protein 4B (CHMP4B) within the cell is mapped before and after wounding, showing involvement in repair of both the cell membrane and nuclear envelope ...
Apresio K. Fajrial +5 more
wiley +1 more source
A chlorine‐functionalized silane modifier (CPTMS) is introduced to cooperatively regulate CO2 reduction to C2+ products on Cu‐based catalysts. Dual‐functional interface sequentially enhances CO2 activation, intermediates protonation and C─C coupling, delivering a 5‐fold increase in C2+ faradaic efficiency (FE, 75% vs.
Ying Ying Ch'ng +14 more
wiley +1 more source
The dynamic disulfide bonds facilitated the development of high‐performance aerospace ablation‐resistant materials. At moderate temperature, the dissociation and recombination of disulfide bonds ensured excellent processability, mechanical properties, and recycling ability of phenolic resin; at high temperature, cleavage of disulfide bonds produced ...
Yu Li +9 more
wiley +1 more source
Plastic deformation in nanostructure silicon formation [PDF]
The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper.
V. A. Smyntyna +3 more
doaj +1 more source
Lithium Niobate Electro‐Optic Photonic Processor for Variational Quantum Eigensolver
An integrated lithium‐niobate‐on‐insulator ququart processor implements an electro‐optically controlled photonic variational quantum eigensolver using single photons encoded in four path modes. Bell‐basis‐emulating ququart projective measurements reduce measurement settings while achieving chemical‐accuracy‐level molecular‐energy estimation.
Jinil Lee +11 more
wiley +1 more source
Microwave dielectric characterization of silicon dioxide
The microwave dielectric properties of silicon dioxide at frequencies of 915 and 2450 MHz were characterized in the temperature range of 24 to approximately 1000°C using the cavity perturbation technique. It is shown that the relative dielectric constant
Andriese, Matthew +9 more
core +1 more source
Engineering Slow‐Carrier Interfacial Recombination Enables Tailored Spectral Response
This work demonstrates that weak‐drift slow carriers are preferentially captured at generic semiconductor surfaces/interfaces and recombine. This process is manipulated to achieve tailored spectral response. A tens of µm‐wide depletion region is created to observe surface collection rates for photocarriers generated at different positions.
Yibo Zhang +5 more
wiley +1 more source
Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide
We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide.
Mitchell DRG +4 more
doaj +1 more source
Giant Magnetic Purcell Effect Induced by High‐Order Mie Resonances
High‐order Mie resonances in dielectric spheres selectively amplify magnetic dipole emission from Eu3+ emitters, producing a giant magnetic Purcell effect. Localized emitters can efficiently access high‐order resonant modes, and the low‐loss TiO2 platform enables direct far‐field observation of the enhanced emission.
Haonan Shi +6 more
wiley +1 more source
Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate
A silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and ...
Yoo, K +6 more
core +1 more source

