Results 101 to 110 of about 53,263 (293)

High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

open access: yesApplied Sciences, 2018
In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional ...
Ming Li, Gong Chen, Ru Huang
doaj   +1 more source

Vision‐Augmented Wearable Interfaces: Bioinspired Approaches for Realistic AI‐Human‐Machine Interaction

open access: yesAdvanced Materials Technologies, EarlyView.
This review presents recent progress in vision‐augmented wearable interfaces that combine artificial vision, soft wearable sensors, and exoskeletal robots. Inspired by biological visual systems, these technologies enable multimodal perception and intelligent human–machine interaction.
Jihun Lee   +4 more
wiley   +1 more source

Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

open access: yes, 2011
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model ...
Boykin, Timothy B.   +4 more
core   +1 more source

Skin‐Like Tri‐Modal Sensors Based on Soft Piezoelectric and Ionic Composites

open access: yesAdvanced Materials Technologies, EarlyView.
Inspired by the multimodal perception of human skin, a soft, skin‐like tri‐modal sensor is presented. The device incorporates an ionically conductive, piezoelectric, elastic composite as its active layer, enabling independent detection of temperature, static strain, and dynamic strain within a single two‐terminal architecture.
Liren Wang   +9 more
wiley   +1 more source

Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

open access: yesNanoscale Research Letters, 2009
Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder.
Liu Jian   +4 more
doaj   +1 more source

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

open access: yesSensors, 2012
This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process.
Chia-Hua Ho   +9 more
doaj   +1 more source

Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices

open access: yesAdvanced Materials Technologies, EarlyView.
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen   +11 more
wiley   +1 more source

Junctionless Silicon Nanowire Resonator

open access: yesIEEE Journal of the Electron Devices Society, 2014
The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this paper, we demonstrate a novel double-transduction principle for silicon nanowire resonators, which exploits ...
Sebastian T. Bartsch   +2 more
doaj   +1 more source

Silicon nanowire optical waveguide (SNOW)

open access: yesOptics Express, 2010
In this paper, we propose a novel optical waveguide consisting of arrays of silicon nanowires in close proximity. We show that such a structure can guide an optical mode provided the electric field is polarized along the length of the nanowires. Furthermore, such guidance can happen even if the nanowires are arranged randomly albeit at a higher ...
Mohammadreza, Khorasaninejad   +1 more
openaire   +2 more sources

Exciton Radiative Lifetimes in Hexagonal Diamond Ge and SixGe1–x Alloys

open access: yesAdvanced Optical Materials, EarlyView.
Strong room‐temperature photoluminescence reported in hexagonal Ge conflicts with theory predicting a nearly dark band edge. First‐principles calculations of excitonic radiative lifetimes fill a key gap in this debate, showing that pristine hexagonal Ge remains intrinsically weakly emissive, while Si alloying only modestly shortens the lifetime and ...
Michele Re Fiorentin   +2 more
wiley   +1 more source

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