Results 91 to 100 of about 21,298 (316)

Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor

open access: yesJournal of Nanotechnology, 2018
The method for the detection of 2,4-dinitrophenol (DNP) in solution is proposed. This method employs the sensors based on silicon nanowire field-effect transistors with protective layers of high-k dielectrics, whose surface is functionalized with an ...
Yuri D. Ivanov   +11 more
doaj   +1 more source

High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

open access: yesApplied Sciences, 2018
In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional ...
Ming Li, Gong Chen, Ru Huang
doaj   +1 more source

Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud   +31 more
wiley   +1 more source

Thin film silicon nanowire photovoltaic devices produced with gold and tin catalysts

open access: yes, 2011
Silicon nanowires produced using pulsed plasma-enhanced chemical vapor deposition have been used as part of a thin film photovoltaic device. Nanowires of differing morphologies were produced by using both gold and tin thin films as a catalyst for growth.
Jennings, P., Parlevliet, D.
core  

Maxwell stress to explain the mechanism for the anisotropic expansion in lithiated silicon nanowires

open access: yesAIP Advances, 2016
This computational research study attempts to explain the process that leads to volume expansion during insertion of lithium ions into a silicon nanowire.
Donald C. Boone
doaj   +1 more source

Single-Nanowire Fuse for Ionization Gas Detection

open access: yesSensors, 2019
Local electric field enhancement is crucial to detect gases for an ionization gas sensor. Nanowires grown collectively along the identical lattice orientation have been claimed to show a strong tip effect in many previous studies.
Hai Liu   +4 more
doaj   +1 more source

Double‐Sided Mechanical Interlocking Enables Soft‐Rigid Conductive Interfaces With a Record High Toughness for Flexible Electronics

open access: yesAdvanced Materials, EarlyView.
A double‐sided mechanical interlocking strategy is developed to create robust electrical contact between polymer electrode and metal interconnect. The fibrous structure enables formation of thread–hole adhesion, which only breaks under bulk failure and achieves a record high interfacial energy exceeding 730 J·m−2. This adhesion secures the integrity of
Gang Li   +6 more
wiley   +1 more source

Conductive Additives for Next‐Generation Batteries: Emphasizing the Potential of Bio‐Derived 3D Carbon Architectures at Electrode–Electrolyte Interfaces

open access: yesAdvanced Materials Interfaces, EarlyView.
3D conductive frameworks can maintain continuous electron transport, mechanical stability, and interfacial integrity, helping next‐generation batteries operate more efficiently. This Review examines their relevance to Si anodes, all‐solid‐state batteries, and dry‐processed electrodes, and highlights bio‐derived carbons as sustainable, structurally ...
SeoYoung Ha   +5 more
wiley   +1 more source

Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

open access: yesNanoscale Research Letters, 2009
Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder.
Liu Jian   +4 more
doaj   +1 more source

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

open access: yesSensors, 2012
This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process.
Chia-Hua Ho   +9 more
doaj   +1 more source

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