Results 81 to 90 of about 53,263 (293)
Resonant Domain Wall Dynamics in a Three‐Dimensional Magnetic Nano Double Helix
Advanced Materials, EarlyView.3D magnetic nanostructures promise exciting possibilities for magnetization dynamics. However, experimental realizations remain scarce. In nanoprinted cobalt double helices, time‐resolved X‐ray microscopy reveals harmonic domain wall dynamics. Simulations identify the mode and additional higher‐frequency resonances, revealing a rich dynamic landscape ...
Pamela Morales‐Fernández +15 more
wiley +1 more source
Quantum Mechanical Comparison between Lithiated and Sodiated Silicon Nanowires
Applied NanoThis computational research study will compare the specific charge capacity (SCC) between lithium ions inserted into crystallized silicon (c-Si) nanowires with that of sodium ions inserted into amorphous silicon (a-Si) nanowires.
Donald C. Boone
doaj +1 more source
Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Nanomaterials, 2018 Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS).
Zhe Ma +10 more
doaj +1 more source
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
, 2012 Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible.
Fujiwara, Akira +2 more
core +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Quantitative measurements of C-reactive protein using silicon nanowire arrays
International Journal of Nanomedicine, 2008 Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses ...
Min-Ho Lee +5 more
doaj
Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime
, 2009 The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasi equilibrium case described by the drift-diffusion model is still an open modeling issue.
Iannaccone, Giuseppe +2 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann +4 more
wiley +1 more source
New Journal of Physics, 2013 Strain nano-engineering provides valuable opportunities to create high-performance nanodevices by a precise tailoring of semiconductor band structure.
Alvarado Tarun +5 more
doaj +1 more source
npj Quantum Information, 2023 Inspired by the challenge of scaling-up existing silicon quantum hardware, we propose a 2d spin-qubit architecture with low compilation overhead. The architecture is based on silicon nanowire split-gate transistors which form 1d chains of spin-qubits and
O. Crawford +3 more
doaj +1 more source