Results 101 to 110 of about 24,872 (164)

Ultra-low loss silicon nitride becomes even cooler. [PDF]

Light Sci Appl
Tan DTH, Chia XX.
europepmc   +1 more source

Investigation of Modal Characteristics of Silicon Nitride Ridge Waveguides for Enhanced Refractive Index Sensing. [PDF]

Micromachines (Basel)
Butt MA, Kozlowski L, Słowikowski M, Juchniewicz M, Drecka D, Filipiak M, Golas M, Stonio B, Dudek M, Piramidowicz R.   +9 more
europepmc   +1 more source

Localized Nanopore Fabrication in Silicon Nitride Membranes by Femtosecond Laser Exposure and Subsequent Controlled Breakdown. [PDF]

ACS Appl Mater Interfaces
Leva CV, Jain S, Kistermann K, Sakurai K, Stemme G, Herland A, Mayer J, Niklaus F, Raja SN.   +8 more
europepmc   +1 more source

Forged by charge: polaron-induced matrix formation in silicon nitride conversion-type anodes for lithium-ion batteries.

J Mater Chem A Mater
Cottom J, Hückmann L, Meyer J, Olsson E.   +3 more
europepmc   +1 more source

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Anisotropy of Silicon Nitride with Aligned Silicon Nitride Whiskers

Journal of the American Ceramic Society, 1999
A model based on anisotropic sintering shrinkage of silicon nitride with aligned silicon nitride whisker seeds was built in order to provide an easy way to obtain information on how the large elongated grains were aligned. The method requires a simple measuring device for the information.
Dong‐Soo Park, Chang‐Won Kim
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Study on Nitridation of Silicon Added With Amorphous Silicon Nitride

Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration, 2011
The direct nitridation process of silicon added with amorphous silicon nitride powder at atmospheric pressure was investigated and the product was analyzed by XRD and SEM. Based on the relationship between the conversion ratio of silicon and the reaction time at different temperatures, a physical and mathematical model was derived to describe the ...
Yanhui Li, Li Wang, Shaowu Yin, Fuming Yang, Chuanping Liu, Lige Tong, Ping Wu   +6 more
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Conduction in silicon nitride and silicon nitride-oxide films

Journal of Physics D: Applied Physics, 1970
The room-temperature current-voltage characterstics of vapour-deposited silicon nitride films and silicon dioxide-nitride composite structures have been investigated. It is observed that conduction is bulk-limited and conforms to the Poole-Frenkel electronic transport mechanism.
B Swaroop, P S Schaffer
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Manufacture of silicon nitride parts and properties of silicon nitride

Soviet Powder Metallurgy and Metal Ceramics, 1972
A study was made of the manufacture of parts from silicon nitride powder and of some properties of this compound. It was established that the composition of the material in which parts are packed during sintering exerts a strong influence on the strength properties and other characteristics of the resulting silicon nitride. Explanations are offered for
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Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces

Thin Solid Films, 2003
Abstract The valence band electronic structure of silicon nitride (Si 3 N 4 ) is studied using the first principal quantum chemical calculation, X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Assuming that the valence band is formed with N 2p and Si 3s, 3p and 3d electrons and based on the XPS and UPS results,
Vladimir A Gritsenko, Alexandr V Shaposhnikov, W.M Kwok, Hei Wong, Georgii M Jidomirov   +4 more
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Nitridation of Silicon and Oxidized‐Silicon

Journal of The Electrochemical Society, 1982
The nitridation of silicon and oxidized‐silicon has been studied. The nitrided films were prepared at 900°–1150°C under ammonia partial pressures of 10−3 to 5 kg/cm2 in nitrogen and were analyzed by ellipsometry and Auger electron spectroscopy. For films formed by nitridation of silicon, we found that the growth kinetics and properties such as chemical
Y. Hayafuji, K. Kajiwara
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