Results 121 to 130 of about 642,295 (221)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Effects of h-BN Doping on the Microstructure, Mechanical Properties, and Dielectric Properties of Silicon Nitride Ceramics. [PDF]

Materials (Basel)
Liu X, Wang Y, Shao H, Zhang X, Zhang J.
europepmc   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Comparative Benchmarking of Glass and Silicon Nitride Nanopores for Single-Molecule Detection. [PDF]

ACS Nano
Zheng F, Wang Z, Bai A, Hu R, Sun X, Sha J, Zhao Q, Chen K, Keyser UF.   +8 more
europepmc   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

Advanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe, X. Yuan, K. Okamoto, X. Liu, C. Wang, T. Wu, H. Funakubo, S. Kondo, T. Nagasaki, P. Ma, A. Emboras, T. Yamada   +11 more
wiley   +1 more source

Narrow-linewidth photonic wirebonded silicon nitride external cavity tunable laser. [PDF]

Sci Rep
Heim DAS, Truong GW, Bose D, Diaz E, Ramirez J, Sherman J, Morrison G, Blumenthal DJ.   +7 more
europepmc   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

Advanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

Finite Element Analysis of Fatigue in Silicon Nitride Ball Bearings Under Hertzian Contact and Lubrication Effects. [PDF]

Materials (Basel)
Singleton T, Khan ZA, Saeed A, Meng Y.
europepmc   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

Advanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu, Chuantong Chen, Ran Liu, Akitsu Shigetou, Katsuaki Suganuma   +4 more
wiley   +1 more source

Broadband acousto-optic modulators on Silicon Nitride. [PDF]

Nat Commun
Kenning SE, Chang TH, Attanasio AG, Jin W, Feshali A, Tian Y, Paniccia M, Bhave SA.   +7 more
europepmc   +1 more source