Results 161 to 170 of about 100,297 (354)

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

Supermode Dispersion of Strongly Coupled Silicon-on-Insulator Waveguides

open access: gold, 2010
C.E. de Nobriga   +7 more
openalex   +2 more sources

From In‐Silico Optimized Microfabrication to Experimental Validation: Engineering a Tridimensional Epi‐Intraneural Interface

open access: yesAdvanced Functional Materials, EarlyView.
An epi‐intraneural interface is developed through in silico optimization and a novel tridimensional microfabrication pipeline. The device integrates penetrating and epineural contacts on a flexible substrate. Mechanical, electrochemical, and in vivo testing in rat and pig reveal robust implantation, low‐threshold activation, and site‐dependent ...
Federico Ciotti   +14 more
wiley   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed.
S. P. Novosyadlyi, V. M. Vivcharuk
doaj  

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. [PDF]

open access: yesMicromachines (Basel), 2021
Hsu LH   +11 more
europepmc   +1 more source

Does a Morphotropic Phase Boundary Exist in ZrxHf1‐xO2‐Based Thin Films?

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates 6 nm zirconium‐rich hafnium‐zirconium oxide thin–film metal–insulator–metal capacitors using a combination of experimental methods and machine learning–based molecular dynamics simulations to provide insight into the physical mechanisms that enhance the dielectric constant near 0 V and attribute it to the field‐induced ...
Pramoda Vishnumurthy   +9 more
wiley   +1 more source

Photonic integrated circuits in silicon-on-insulator [PDF]

open access: yes, 2010
Absil, P   +5 more
core   +2 more sources

Broadband polarization-insensitive optical switch on silicon-on-insulator platform

open access: gold, 2018
Huizhan Yang   +5 more
openalex   +1 more source

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