Results 211 to 220 of about 85,304 (259)
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Growth of GaAs on polycrystalline silicon-on-insulator
Journal of Materials Science: Materials in Electronics, 2003The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si.
Riikonen, J. +5 more
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure
Semiconductors, 2012Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions.
A. D. Mokrushin +2 more
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Development of silicon-on-insulator waveguide technology
SPIE Proceedings, 2004An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed.
Harjanne, Mikko +5 more
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Novel silicon-on-insulator structures for silicon waveguides
IEEE SOS/SOI Technology Conference, 2003Summary form only given. The authors discuss optical waveguiding at a wavelength of 1.3 microns in a separation by implantation of oxygen (SIMOX) sample with a silicon top layer about two microns thick on a buried SiO/sub 2/ layer about 4000 AA thick.
E. Cortesi, F. Namavar, Richard A. Soref
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1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Silicon-on-diamond: An advanced silicon-on-insulator technology
Diamond and Related Materials, 2005Abstract Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75–100 μm thick and serves as an electrical insulator, heat ...
X. Li +7 more
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Silicone electrical insulation
Proceedings of the IEE Part A: Power Engineering, 1959Silicone fluids, compounds, rubbers and resins are described in terms of their chemical structure and physical properties, alone or in combination with inorganic insulating materials. There follows a brief review of thermal endurance evaluation and the position of siliconeinsulation in British and other Standards.
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2014
Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
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Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
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Crystalline silicon on insulators by graphoepitaxy
1979 International Electron Devices Meeting, 1979Graphoepitaxy is a new technique that uses artificial surface relief structures to induce crystallographic orientation in thin films. A simple model for graphoepitaxy is presented which predicts that materials that can be deposited on smooth amorphous substrates to produce a crystalline texture can be uniformly oriented by appropriate surface relief ...
Henry I. Smith +3 more
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Analysis of porous silicon silicon-on-insulator materials
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991Abstract Silicon-on-insulator materials are being used in the development of radiation hard VLSI electronic circuits and one promising route is the use of porous silicon. Porous silicon is produced by electrochemically etching selected regions of silicon wafers to produce volumes of highly reactive porous silicon which can be converted to dielectric ...
M.C. Briggs +4 more
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