Results 221 to 230 of about 12,859 (264)
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Silicone electrical insulation
Proceedings of the IEE Part A: Power Engineering, 1959Silicone fluids, compounds, rubbers and resins are described in terms of their chemical structure and physical properties, alone or in combination with inorganic insulating materials. There follows a brief review of thermal endurance evaluation and the position of siliconeinsulation in British and other Standards.
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Silicon on insulator photo-activated modulator
Microelectronics Journal, 2008In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel.
Doron Abraham +4 more
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1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Silicon-on-insulator technology
IEE Proceedings I Solid State and Electron Devices, 1986The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure
Semiconductors, 2012Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions.
A. V. Leonov +2 more
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Silicon-on-Insulator and Porous Silicon
2004Silicon is by far the most widely used semiconductor material. It is abundant in the earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials, silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown ...
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SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE
International Journal of High Speed Electronics and Systems, 2012Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT≥ 100mA/mm ), high operating frequency ...
WILLIAM LEPKOWSKI +4 more
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Measurement Techniques, 1983
Interference is among the commonest methods of measuring epitaxial film thicknesses [i, 2]. Spectrophotometers working in the visible and infrared regions are used [3]. The measurements involve determining the positions of the interference maxima in the reflection spectra. The effects of factors that influence the accuracy are closely known [4].
S. I. Stolyarov +4 more
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Interference is among the commonest methods of measuring epitaxial film thicknesses [i, 2]. Spectrophotometers working in the visible and infrared regions are used [3]. The measurements involve determining the positions of the interference maxima in the reflection spectra. The effects of factors that influence the accuracy are closely known [4].
S. I. Stolyarov +4 more
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Silicon-on-Insulator Wafers with Buried Cavities
Journal of The Electrochemical Society, 2006Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm.
Suni, Tommi +7 more
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Silicon on insulator optoelectronics
2001These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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