Results 251 to 260 of about 67,402,211 (299)
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Silicon-on-Insulator Architectures for Brillouin scattering
Proceedings of the 2022 Conference on Lasers and Electro-Optics Pacific Rim, 2022We report Brillouin scattering gain in two novel Silicon-on-Insulator architectures – double slab and double-lobed waveguides. We show that the geometrical parameters influence the Brillouin gain and frequency shift, thereby offering flexibility to maximize gain.
B Om Subham +4 more
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1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
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Silicon-on-Insulator and Porous Silicon
2004Silicon is by far the most widely used semiconductor material. It is abundant in the earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials, silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown ...
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Silicon on insulator photo-activated modulator
Microelectronics Journal, 2008In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel.
Doron Abraham +4 more
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SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE
International Journal of High Speed Electronics and Systems, 2012Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT≥ 100mA/mm ), high operating frequency ...
WILLIAM LEPKOWSKI +4 more
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Measurement Techniques, 1983
Interference is among the commonest methods of measuring epitaxial film thicknesses [i, 2]. Spectrophotometers working in the visible and infrared regions are used [3]. The measurements involve determining the positions of the interference maxima in the reflection spectra. The effects of factors that influence the accuracy are closely known [4].
S. I. Stolyarov +4 more
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Interference is among the commonest methods of measuring epitaxial film thicknesses [i, 2]. Spectrophotometers working in the visible and infrared regions are used [3]. The measurements involve determining the positions of the interference maxima in the reflection spectra. The effects of factors that influence the accuracy are closely known [4].
S. I. Stolyarov +4 more
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Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure
Semiconductors, 2012Electron mobility in a thin silicon layer of a metal-insulator-semiconductor-insulator-metal system is studied as a function of longitudinal and transverse electric fields (in wide ranges of their values), temperature in the range 1.7 to 400 K, and changes in γ-ray irradiation conditions.
A. V. Leonov +2 more
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Silicon on insulator optoelectronics
2001These Ecole polytechnique federale de Lausanne EPFL, n° 2487 (2001)Faculte des sciences et techniques de l'ingenieurInstitut de microtechniqueJury: Marc Ilegems, Mihai Adrian Ionescu, K. Petermann, Philippe Renaud, Alfred Rufer, Luc Thevenaz, Jorg Troger Public defense: 2001-12-14 Reference doi:10.5075/epfl-thesis-2487Print copy in library catalog ...
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Silicone electrical insulation
Proceedings of the IEE Part A: Power Engineering, 1959Silicone fluids, compounds, rubbers and resins are described in terms of their chemical structure and physical properties, alone or in combination with inorganic insulating materials. There follows a brief review of thermal endurance evaluation and the position of siliconeinsulation in British and other Standards.
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Silicon-on-insulator technology
IEE Proceedings I Solid State and Electron Devices, 1986The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
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