Results 21 to 30 of about 2,146,457 (416)

In-Plane Monolithic Integration of Scaled III-V Photonic Devices

open access: yesApplied Sciences, 2021
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material.
Markus Scherrer   +5 more
doaj   +1 more source

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320–400 GHz Enabled by Silicon-on-Insulator Micromachining

open access: yesIEEE Transactions on Antennas and Propagation, 2020
Two high-gain flat array antenna designs operating in the 320–400 GHz frequency range are reported in this article. The two antennas show the measured gains of 32.8 and 38 dBi and consist of a $16\times16$ (256) element array and a $32\times32$ (1024)
A. Gomez-Torrent   +6 more
semanticscholar   +1 more source

Silicon-on-insulator nanophotonics [PDF]

open access: yesSPIE Proceedings, 2005
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This allows the integration of many functions onto a chip. Silicon-on-insulator (SOI) is an ideal material for nanophotonics. It consists of a thin layer of silicon on top of an oxide buffer.
Stephan Beckx   +9 more
openaire   +2 more sources

Remote capacitive sensing in two-dimension quantum-dot arrays [PDF]

open access: yes, 2020
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process.
Duan, Jingyu   +5 more
core   +2 more sources

Highly-Sensitive Unbalanced MZI Gas Sensor Assisted With a Temperature-Reference Ring Resonator

open access: yesIEEE Photonics Journal, 2022
In this paper we study the gas sensing performance of a compact silicon photonics Mach-Zehnder interferometer (MZI) with a coiled sensing arm. A partially exposed sensor was fabricated using deep UV lithography, with a process resolution of 248 nm ...
Ayat M. Taha   +3 more
doaj   +1 more source

Tunable optical properties of silicon-on-insulator photonic crystal slab structures [PDF]

open access: yesJournal of the European Optical Society-Rapid Publications, 2009
A photonic crystal slab structure with one-dimensional periodicity, obtained by preferential etching of a silicon-on-insulator wafer, is numerically investigated in 3-D.
Tasolamprou A. C.   +4 more
doaj   +1 more source

High-Q TeO2–Si Hybrid Microring Resonators

open access: yesApplied Sciences, 2022
We present the design and experimental measurement of tellurium oxide-clad silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to a propagation loss of 0.42 dB/cm at wavelengths around 1550 nm.
Khadijeh Miarabbas Kiani   +3 more
doaj   +1 more source

Optimization of photoluminescence from W centers in a silicon-on-insulator. [PDF]

open access: yesOptics Express, 2019
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 µm. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the
S. Buckley   +10 more
semanticscholar   +1 more source

Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature. [PDF]

open access: yesNano letters (Print), 2017
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact ...
Hyunseok Kim   +7 more
semanticscholar   +1 more source

Preparation of a Photoluminescent Film on a Silicon-On-Insulator Device for the Simple, Rapid, and Quantitative Detection of a Hydatid Disease Diagnostic Protein Marker

open access: yesIEEE Photonics Journal, 2017
A silicon-on-insulator (SOI) device is an important integrated circuit technology containing an insulating material. In this paper, an SOI wafer consisting of n-type silicon grown on the surface of a SiO2 layer was adopted.
Xiaoyi Lv   +6 more
doaj   +1 more source

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