Results 81 to 90 of about 4,018 (263)

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Phase‐Pure and Size‐Tunable Tin Halide Perovskite Quantum Dots

Advanced Materials, EarlyView.
A trioctylphosphine oxide modulated protocol allows for the synthesis and study of the optical properties of a broad library of tin halide perovskite quantum dots across multiple A‐ and X‐site compositions with precise size tuning while eliminating unwanted 2D phases.
Ole F. Dressler, Benjamin Aymoz, Sebastian Sabisch, Stefanie Frick, Sebastian Siol, Dmitry N. Dirin, Simon C. Boehme, Maksym V. Kovalenko   +7 more
wiley   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Effects of Electron Beam Lithography Process Parameters on the Structure of Nanoscale Devices Across Three Substrate Materials

Photonics
Electron beam lithography (EBL) is a pivotal technology in the fabrication of nanoscale devices, renowned for its high precision and resolution capabilities.
Zhongyang Liu, Yue Chen, Xuanyu Li, Luwei Wang, Junle Qu   +4 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Modified Effective Carrier Density in SOI-MESFET With an Asymmetric Dielectric Trapdoor

IET Circuits, Devices and Systems
In this paper, a new silicon-on-insulator-metal semiconductor field effect transistor (SOI-MESFET) is introduced with improved DC and RF characteristics compared to conventional SOI-MESFETs (C-SOI-MESFETs).
Zohreh Roustaie, Melina Kehtarmanesh, Ali Asghar Orouji   +2 more
doaj   +1 more source

Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon

Advanced Materials, EarlyView.
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra, Tobias Schwaigert, Yingxin Zhu, Aiden Ross, Muhammad Aminul Haque Chowdhury, Shun‐Li Shang, Sameer Singh, Zhiyu Zhang, Zhe Wang, Brynn Brower, Saugata Sarker, Suchismita Sarker, Zi‐Kui Liu, Rama K. Vasudevan, Long‐Qing Chen, Yang Yang, Darrell G. Schlom, Venkatraman Gopalan   +17 more
wiley   +1 more source

DESIGN OF A POLARIZATION-INDEPENDENT MMI SOI COUPLER BASED MICRORESONATOR USING SANDWICH STRUCTURES [PDF]

Journal of Engineering Science and Technology, 2013
A microresonator based on multimode interference (MMI) couplers using sandwich structures is described in this paper. The birefringence can be controlled by introducing an additional dielectric layer within a silicon channel waveguide. It is shown that a
TRUNG-THANH LE
doaj  

Selective Laser Sintering and Graphitization for Mono‐Matrix Unibody Fabrication of Integrated Stereo‐Circuit and Stereo‐Fluidic Wearable Electronics

Advanced Materials, EarlyView.
A novel selective laser sintering and graphitization (SLSG) 3D printing technology enables unibody fabrication of compacted insulating structures and conductive circuits in fluidic‐integrated wearable electronics through adaptive photonic modulation.
Li Zhang, Wing Cheung Mak
wiley   +1 more source