Results 81 to 90 of about 3,859 (261)

Reconstructing Quantum Dot Surfaces via Dual‐Functional Ligand Pairing Enables Efficient Shortwave Infrared Optoelectronics

Advanced Functional Materials, EarlyView.
This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim, Minjung Yang, Yunjin Lee, Gaeun Cho, Min‐Jae Si, Jaewoo Jeong, Seoryeon Jeong, Sol‐Hee Kim, Taeho Han, Seungin Jee, Byeong‐Chan Kim, Woong Kim, Seungmin Lee, Jun Hong Noh, Han Seul Kim, Yujin Jung, Se‐Woong Baek   +16 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Plasmonic Enhancement of Fluorescence and Protein Dynamics in Living Mammalian Cells

Advanced Materials, EarlyView.
This study demonstrates plasmonic enhancement of the function of fluorescent voltage sensing proteins (genetically encoded voltage indicators, (GEVIs), QuasAr6) in live mammalian cells. Coupling to plasmonic nanoparticles does not just increase fluorescence, but influences the protein photocycle, creating a hybrid sensor with its response speed to ...
Marco Locarno, Qiangrui Dong, Marco Post, Xin Meng, Cristiano Glessi, Nynke Marije Hettema, Nidas Brandsma, Sebbe Blokhuizen, Alejandro Castañeda Garcia, Srividya Ganapathy, Thieme Schmidt, Lars van Roemburg, Bing Xu, Chun‐Ting Cho, Liedewij Laan, Miao‐Ping Chien, Daan Brinks   +16 more
wiley   +1 more source

Effects of Electron Beam Lithography Process Parameters on the Structure of Nanoscale Devices Across Three Substrate Materials

Photonics
Electron beam lithography (EBL) is a pivotal technology in the fabrication of nanoscale devices, renowned for its high precision and resolution capabilities.
Zhongyang Liu, Yue Chen, Xuanyu Li, Luwei Wang, Junle Qu   +4 more
doaj   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Modified Effective Carrier Density in SOI-MESFET With an Asymmetric Dielectric Trapdoor

IET Circuits, Devices and Systems
In this paper, a new silicon-on-insulator-metal semiconductor field effect transistor (SOI-MESFET) is introduced with improved DC and RF characteristics compared to conventional SOI-MESFETs (C-SOI-MESFETs).
Zohreh Roustaie, Melina Kehtarmanesh, Ali Asghar Orouji   +2 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

DESIGN OF A POLARIZATION-INDEPENDENT MMI SOI COUPLER BASED MICRORESONATOR USING SANDWICH STRUCTURES [PDF]

Journal of Engineering Science and Technology, 2013
A microresonator based on multimode interference (MMI) couplers using sandwich structures is described in this paper. The birefringence can be controlled by introducing an additional dielectric layer within a silicon channel waveguide. It is shown that a
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