Results 111 to 120 of about 98,990 (285)

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

OTR Sistemlerinde Silikon Görüntüleme Ekranın Geant4 Simülasyonu

Süleyman Demirel Üniversitesi Fen-Edebiyat Fakültesi Fen Dergisi, 2011
Özet: Hızlandırıcı sistemlerinde Optik Geçiş Radyasyonu (OTR), demet profilini belirlemede kullanılır. OTR sistemlerinde görüntüleme ekranı olarak genelde alüminyum ve altın kullanılmaktadır.
Veli Çapalı, Suat Özkorucuklu
doaj  

Design and performance of the muon monitor for the T2K neutrino oscillation experiment

, 2010
This article describes the design and performance of the muon monitor for the T2K (Tokaito-Kamioka) long baseline neutrino oscillation experiment. The muon monitor consists of two types of detector arrays: ionization chambers and silicon PIN photodiodes.
A. Murakami, A.K. Ichikawa, Ahn, Astier, Bugorsky, C. Matsumura, Chi, Fukuda, H. Kubo, Harris, Hornbeck, K. Maeda, K. Matsuoka, K. Nishikawa, K. Sakashita, K. Suzuki, K. Tashiro, K. Yamamoto, Kirshner, Kopp, Loeb, M. Yokoyama, S.Y. Suzuki, T. Maruyama, T. Nakaya, T. Ozaki, Wilkinson, Ziock   +27 more
core   +1 more source

Universal In Situ Isotope Exchange Raman Spectroscopy (IERS) Methodology for Measuring Oxygen Surface Exchange Dynamics Using a Probe Layer

Advanced Functional Materials, EarlyView.
A bespoke multilayer thin film configuration has been designed, which overcomes the material dependency of conventional isotope exchange Raman spectroscopy (IERS). This universal IERS methodology is efficient, non‐destructive and provides additional structural information and time resolution, which can be further extended to various isotopic elements ...
Zonghao Shen, Francesco Chiabrera, Alexander Stangl, Laetitia Rapenne, Federico Baiutti, Carmen Jiménez, Albert Tarancón, Mónica Burriel   +7 more
wiley   +1 more source

Experience on 3D Silicon Sensors for ATLAS IBL

, 2014
3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics ...
Darbo, Giovanni
core   +1 more source

Electrically Tunable On‐Chip Topological Photonics with Integrated Carbon Nanotubes

Advanced Functional Materials, EarlyView.
This work demonstrates electrically tunable on‐chip topological THz devices by integrating 2D carbon nanotube (CNT) sheets with valley‐Hall photonic crystals, enabling broadband transmission modulation (71% modulation depth) and tunable narrowband filtering (0.54 GHz shift) through electrically induced thermal tuning. This advancement paves the way for
Jifan Yin, Wenhao Wang, Thomas Caiwei Tan, Abhishek Kumar, Ridong Jia, Nikhil Navaratna, Ranjan Singh, Lijuan Xie   +7 more
wiley   +1 more source

Research Progress of Silicon-Based Heterojunction Mid-Wave Infrared Photodetectors [PDF]

Hangkong bingqi
Mid-wave infrared photodetector is an important photoelectric detection equipment, which uses the photoelectric effect to convert infrared radiation into electrical signals.
Zeng Yuling, Feng Song, Ma Baoke, He Xinyi, Wu Jianyang, Li Haojie
doaj   +1 more source

Photonic Engineering Enables All‐Passive Upconversion Imaging with Low‐Intensity Near‐Infrared Light

Advanced Functional Materials, EarlyView.
A passive upconversion imaging system enables the observation of scenes illuminated by low‐intensity incoherent near‐infrared light from 750 to 930 nm, by converting it into the visible without the use of external power. The upconverter is enabled by triplet–triplet annihilation in a bulk heterojunction, with absorption enhanced by plasmonic resonators
Rabeeya Hamid, Demeng Feng, Pournima Narayanan, Justin S. Edwards, Manchen Hu, Emma Belliveau, Minjeong Kim, Shenwei Yin, Sanket Deshpande, Chenghao Wan, Linda Pucurimay, David A. Czaplewski, Daniel N. Congreve, Mikhail A. Kats   +13 more
wiley   +1 more source

Polarization Effects in Si-n-p Radiation Receivers

East European Journal of Physics
This paper presents a comprehensive analysis of n-p junction currents and polarization effects in diffusion Si detectors (receivers) for radiation. The mechanisms of polarization induced by charge-carrier capture at localized centers and the formation of
Abdumalik G. Gaibov, Kudbiddin I. Vakhabov, Marguba S. Mirkomilova, Utkir E. Djuraev   +3 more
doaj   +1 more source

Silicon carbide neutron detectors for reactor monitoring in subcritical conditions [PDF]

EPJ Web of Conferences
Silicon carbide (SiC) semiconductor detectors offer key advantages for radiation detection, including a wide bandgap, high thermal conductivity and radiation hardness, making them ideal for applications in harsh environments. Engineering and optimization
Radulović Vladimir, Makino Takahiro, Bisiach Danilo   +2 more
doaj   +1 more source