Results 261 to 270 of about 98,990 (285)

Silicon radiation detectors (Review)

Instruments and Experimental Techniques, 2007
The modern status of the field of development of silicon detectors of charged particles and x/γ rays is considered. The types and characteristics of spectrometric detectors are briefly described; the predominant attention is given to track devices. The results of studies of the radiation resistance of silicon detectors are presented.
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Czochralski silicon radiation detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
An overview is presented of some of the recent results concerning the suitability of Czochralski silicon to High Energy Physics (HEP) radiation detectors. It has been shown that an elevated oxygen concentration within the bulk silicon of detectors offers increased radiation hardness to charged particle radiation.
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Radiation hard strip detectors on oxygenated silicon

2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310), 2002
Recent results of the RD48 (ROSE) collaboration suggest the usage of oxygen-enriched silicon for sensors operated in the harsh radiation environment of future high luminosity experiments. To investigate if the anticipated beneficial properties are still present after full processing of the wafers, full-size strip detectors designed for the innermost ...
Andricek, L., Lutz, G., Moser, H., Richter, R.   +3 more
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Radiation hardening of silicon strip detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
Abstract We introduce two methods to reduce the surface radiation damage of silicon strip detectors. The microscopic reason of surface radiation damage is mainly due to the generation of radiation induced interface traps. The interface traps formation occurs as a result of a series of processes initiated by the creation of electron–hole pairs in SiO ...
S. Yoshida, T. Ohsugi, Y. Fukazawa, K. Yamamura, K. Yamamoto, K. Sato   +5 more
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Radiation damage to silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
Abstract A summary of recent progress in understanding the fundamental causes of bulk damage in high resistivity silicon detectors is given. A model based on deep acceptor states in the material appears to explain most of the experimental results. Candidates for the traps have been tentatively identified as vacancy-oxygen complexes with the aid of ...
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Silicon radiation detector development at VTT

2007 IEEE Nuclear Science Symposium Conference Record, 2007
VTT has two decades experience on the manufacturing and design of the silicon radiation detectors. The activities cover a range of industrial devices as well as the devices for the physics experiments. The paper gives an overview on the new solid state detector development activity at VTT that comprise advanced X-ray photo diodes, through wafer ...
Kalliopuska, Juha, Eränen, Simo, Virolainen, Tuula, Kämäräinen, Veikko, Ji, Fan, Garcia, Francisco, Orava, Risto, van Remortel, Nick, Santala, Marko   +8 more
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Radiation damage in silicon microstrip detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
Abstract A radiation damage effect on silicon strip detectors of pn-junction type is investigated using a high energy proton beam. In order to clarify the cause of leakage current increase, several variations of strip detectors with different surface structures were made and tested.
T. Ohsugi, A. Taketani, M. Noda, Y. Chiba, M. Asai, T. Kondo, T. Sato, M. Takasaki, K.H. Tanaka, K. Kondo, H. Hirayama, K. Yamamoto, H. Tanaka   +12 more
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Silicon detectors for nuclear radiation

Sensors and Actuators, 1988
Abstract The working principle of Si radiation detectors is described, choosing a p+nn+ structure as a typical device. The physical laws for interaction of corpuscular and gamma radiation with matter are discussed and the conditions for energy spectroscopy derived.
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Metal/amorphous silicon multilayer radiation detectors

IEEE Transactions on Nuclear Science, 1989
A multilayer structure is described for use in a number of radiation detectors. The structure consists of alternating layers of metal and amorphous silicon (a-Si). The absorption of radiation mainly occurs in the metal layers, while electron-hole pairs are generated in the a-Si layers by the emitted secondary particles from the metal layers.
Y. Naruse, T. Hatayama
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Radiation hardening of silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
Abstract The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current, evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic ...
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