Results 271 to 280 of about 98,990 (285)

Radiation Resistant Silicon Diode Neutron Detectors

Nuclear Applications, 1967
Low-resistivity (10Ω-cm) silicon diodes were employed as fast-neutron monitors, using a 238U conversion foil.
L. M. Epstein, R. R. Ferber
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Stabilization of radiation damage in a silicon diode radiation detector

International Journal of Radiation Oncology*Biology*Physics, 1980
Measurements of the short circuit current generated by exposure in a Co-60 beam of a type 1N2482 silicon diode have been made following irradiation by 6, 8, 12 and 18 MeV electrons. It is shown that the loss of sensitivity increases with both energy and dose.
D, Jones, D, Schumacher
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Radiation damage in silicon strip detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
Abstract Silicon strip detectors with 5 μm spatial resolution have been used during 1982–1985 in the ACCMOR spectrometer at CERN. After a local beam flux of about 1014 minimum ionizing particles per cm2 we observe a significant increase in dark current and systematic distortions in the measured coordinates which are explained in terms of a decrease ...
Dietl, H., Gooch, T., Kelsey, D., Klanner, R., Löffler, A., Pepé, M., Wickens, F.   +6 more
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Radiation Damage in Silicon Detector Devices

2017
The intent of this chapter is to introduce the radiation effects and give a general understanding of radiation damage – its mechanism, microscopic and macroscopic effects.
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Silicon p-n Junction Radiation Detectors

IRE Transactions on Nuclear Science, 1960
Silicon p-n junction particle detectors have been fabricated by diffusing phosphorus to various depths between 0.1 and 2.0 ? into high resistivity p-type silicon. Various base material resistivities have been employed, ranging from 100 ? cms to 13,000 ? cms. Diffusions have been carried out both by the "gaseous" and the "paint-on" process.
G. L. Miller, W. L. Brown, P. F. Donovan, I. M. Mackintosh   +3 more
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Radiation effects on ac-coupled microstrip silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
Abstract The radiation hardness of FOXFET biased ac-coupled microstrip detectors, foreseen for the upgraded version of the vertex detectors (SVX') of the CDF experiment, has been studied. The detectors have been irradiated with 60 Co γ rays with doses up to 1 Mrad.
N. BACCHETTA, BISELLO, DARIO, G. BOLLA, C. CANALI, P. G. FUOCHI, PACCAGNELLA, ALESSANDRO   +5 more
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New silicon drift detectors for synchrotron radiation applications

IEEE Symposium Conference Record Nuclear Science 2004., 2005
This paper describes new topologies of silicon drift detectors dedicated to high resolution time- and energy-resolved X-ray imaging. We will discuss the design features and performances of the Controlled Drift Detector (CDD), a new detector topology featuring 2-D position sensing and energy spectroscopy of X-rays in the range 1-20 keV with a frame rate
CASTOLDI, ANDREA, GALIMBERTI, ANTONIO, GUAZZONI, CHIARA, L. STRUEDER   +3 more
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Silicon carbide detector for laser-generated plasma radiation

Applied Surface Science, 2013
We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas.
Bertuccio, G., Puglisi, D., TORRISI, Lorenzo, Lanzieri, C.   +3 more
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Relaxation of radiation damage in silicon planar detectors

Journal of Applied Physics, 1994
The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by α-particle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature annealing, including self-annealing at room temperature, of the ...
Eremin, V., Ivanov, A., Storkan, N., Verbitskaya, E., Li, Zheng, Schmidt, B.   +5 more
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Lithium-drifted, silicon radiation detectors for harsh radiation environments

Journal of Materials Science: Materials in Electronics, 2008
A model describing the passivation by Li atoms of acceptors arising from radiation damage in Si detectors has been developed. Our studies indicate that it is possible to produce a protocol that will allow the in situ recovery of Lithium-drifted Si particle detectors under irradiation by high-energy particles.
J. Grant, C. Buttar, M. Brozel, A. Keffous, A. Cheriet, K. Bourenane, A. Bourenane, F. Kezzoula, H. Menari   +8 more
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