Results 121 to 130 of about 83,574 (291)
Titanium single electron transistor fabricated by electron-beam lithography
, 2001 A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask.
Ashcroft +31 more
core +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
Advanced Functional Materials, EarlyView.MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Electron counting in a silicon single-electron pump
New Journal of Physics, 2015 We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.
Tuomo Tanttu +6 more
doaj +1 more source
Electron counting of single-electron tunneling current [PDF]
Single-electron tunneling through a quantum dot is detected by means of a radio-frequency single-electron transistor.. Poisson statistics of single-electron-tunneling events are observed from frequency domain measurements, and individual tunneling events
Cheong, HD +4 more
core +1 more source
Light emitting single electron transistors
, 2006 10 pages, 8 ...
Kuo, David M. -T., Chang, Yia-chung
openaire +2 more sources
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Single-electron transistor effect in a two-terminal structure
, 1997 A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether.
C. T. Black +9 more
core +1 more source
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing
APL Machine LearningArtificial optoelectronic synaptic transistors have attracted extensive research interest as an essential component for neuromorphic computing systems and brain emulation applications.
Jiaxiang Chen +9 more
doaj +1 more source
Clocked single-spin source based on a spin-split superconductor
New Journal of Physics, 2016 We propose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator (FI) layer through which it is coupled to superconducting leads.
Niklas Dittmann +2 more
doaj +1 more source