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The single-electron transistor
Reviews of Modern Physics, 1992The discovery of periodic conductance oscillations as a function of charge density in very small transistors has led to a new understanding of the behavior of electrons in such small structures. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicronsize transistors, isolated from ...
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Sketched oxide single-electron transistor
Nature Nanotechnology, 2011Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal ...
Guanglei, Cheng +10 more
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A New Single Electron Transistor
50th Annual Device Research Conference, 1992Summary form only given. The authors propose and demonstrate a novel single-electron transistor (SET) where the drain current is controlled by a single electron. This SET is similar to a GaAs-AlGaAs heterostructure modulation-doped FET, except that it has a split gate which electrostatically squeezes a 2-D channel into a 1-D channel, and it also has a ...
Stephen Y. CHOU, Yun WANG
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Single-electron transistor logic
Applied Physics Letters, 1996We present the results of numerical simulations of a functionally complete set of complementary logic circuits based on capacitively coupled single-electron transistors (CSETs). The family includes an inverter/buffer stage, as well as two-input NOR, NAND, and XOR gates, all using similar tunnel junctions, and the same dc bias voltage and logic levels ...
R. H. Chen +2 more
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Ferromagnetic single electron transistor
Solid-State Electronics, 1998Abstract We studied magnetotransport properties of a single electron transistor (SET) consist of Ni/NiO/Co ultrasmall tunnel junctions. At high temperatures or at high bias conditions, the SET shows magnetoresistance (MR) of about 4% which originates from the magnetic valve effect.
Keiji Ono +2 more
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Single Electron Transistor in Aqueous Media
Advanced Materials, 2013A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based ...
Chichao, Yu +4 more
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Silicon Single-Electron Transistors and Single-Electron CCD
MRS Proceedings, 2001AbstractWe have developed two types of devices for silicon-single-electronics; a single-electron transistor (SET) and a single-electron charge coupled device (CCD). Both devices were fabricated on SOI (silicon on insulator) wafers. For the SET fabrication, we used a novel method called pattern-dependent oxidation (PADOX), which exploits special ...
Yasuo Takahashi +3 more
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Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors
Japanese Journal of Applied Physics, 1997We have performed Monte Carlo studies of complementary capacitively coupled single-electron transistor (complementary C-SET) logic gates for single-electron digital logic circuits. The simulations carried out with various types of complementary C-SET logic gates showed that serial connections of single-electron transistors necessary for multi ...
Jeong, MY, Jeong, YH, Hwang, SW, Kim, DM
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Single-electron transistor backaction on the single-electron box
Physical Review B, 2005We report an experimental observation of the backaction of a single-electron transistor (SET) measuring the Coulomb staircase of a single-electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb ...
B. A. Turek +6 more
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