Results 21 to 30 of about 83,574 (291)

Single-electron tunneling by using a two-dimensional Corbino nano-scale disk

AIP Advances, 2015
We investigate a single-electron tunneling effect of two-dimensional electron systems formed in the Corbino nano-scale disk. By controlling bias and gate voltages, the transistor using this effect is able to control electrons one by one.
H. Taira, A. Suzuki
doaj   +1 more source

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

The Stability Diagram of a Single-Electron Transistor

Science Technology and Engineering Journal (STEJ), 2021
A single-electron transistor (SET) is a promising technology, superseding a traditional transistor. This device needs to be accurately controlled by external voltage sources because this sophisticated structure is operated in the submicron ...
Titipong Phoophathong, Supachai Ritjareonwattu   +1 more
doaj  

Room temperature molecular single-electron transistor [PDF]

Physics-Uspekhi, 1998
A room temperature single-electron transistor based on the single cluster molecule has been demonstrated for the first time. Scanning tunneling microscope tip was used to study the transport via single carboran cluster molecule 1,7-(CH_3)_2-1,2-C_2B_{10}H_9Tl(OCOCF_3)_2 incorporated into the Langmuir-Blodgett monolayer of the stearic acid.
Soldatov, E. S., Khanin, V. V., Trifonov, A. S., Gubin, S. P., Kolesov, V. V., Presnov, D. E., Iakovenko, S. A., Khomutov, G. B., Korotkov, A. N.   +8 more
openaire   +3 more sources

Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets [PDF]

, 2007
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets.
Christou, G., del Barco, E., Henderson, J. J., Mishra, A., Ramsey, C. M.   +4 more
core   +3 more sources

A single electron transistor charge sensor in strong rf fields

AIP Advances, 2018
We measure the charge sensitivity, Se, of a single electron transistor (SET) in the presence of strong (Vrf ∼ e/Cg) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where Cg is the gate capacitance.
R. M. Lewis, C. T. Harris, E. A. Shaner
doaj   +1 more source

Voltage-controlled Hubbard spin transistor

Physical Review Research, 2021
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going
Rozhin Yousefjani, Sougato Bose, Abolfazl Bayat   +2 more
doaj   +1 more source

Design and Simulation of Two Bits Single-electron Logic Circuit using Double Quantum Dot Single Electron Transistor

International Journal of Technology, 2014
Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the ...
Arief Udhiarto, Mohammad Ali Tamam, Ratno Nuryadi, Djoko Hartanto   +3 more
doaj   +1 more source

Modeling and the analysis of control logic for a digital PWM controller based on a nano electronic single electron transistor [PDF]

Serbian Journal of Electrical Engineering, 2008
This paper describes the modelling and the analysis of control logic for a Nano-Device- based PWM controller. A comprehensive simple SPICE schematic model for Single Electron transistor has been proposed. The operation of basic Single Electron Transistor
Rathnakannan Kailasam, Ranjan Vanaja
doaj   +1 more source

Quantum criticality in ferromagnetic single-electron transistors [PDF]

Proceedings of the National Academy of Sciences, 2005
Considerable evidence exists for the failure of the traditional theory of quantum critical points, pointing to the need to incorporate novel excitations. The destruction of Kondo entanglement and the concomitant critical Kondo effect may underlie these emergent excitations in heavy fermion metals (a prototype system for quantum criticality)
Kirchner, Stefan, Zhu, Lijun, Si, Qimiao, Natelson, D.   +3 more
openaire   +3 more sources