Results 51 to 60 of about 83,574 (291)

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

First Principles Calculations of Carbon-Nanotube and Boron-Nanotube Based Single Electron Transistors

East European Journal of Physics, 2020
Low power consumption, small device size and better controlled onto the charge carriers are the factors, that made Single-electron transistor (SET) a suitable candidate for molecular electronics; yet there are some improvements that can be done in order ...
Sraja Chauhan, Ajay Singh Verma
doaj   +1 more source

Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors

Nanomaterials, 2022
Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically.
Pooja Yadav, Soumya Chakraborty, Daniel Moraru, Arup Samanta   +3 more
doaj   +1 more source

Full Counting Statistics in Strongly Interacting Systems: Non-Markovian Effects

, 2005
We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor
Alessandro Braggio, G. B. Lesovik, J. König, Jürgen König, L. S. Levitov, Rosario Fazio, S. Kogan, Y. V. Nazarov   +7 more
core   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Single electron capacitance spectroscopy of vertical quantum dots using a single electron transistor

, 1998
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot.
Ashoori, R. C., Berman, D., Koltonyuk, M., Pfeiffer, N., West, K. W., Zhitenev, N. B.   +5 more
core   +2 more sources

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Dynamically controlled charge sensing of a few-electron silicon quantum dot

AIP Advances, 2011
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control.
C. H. Yang, W. H. Lim, F. A. Zwanenburg, A. S. Dzurak   +3 more
doaj   +1 more source

Detection of charge motion in a non-metallic silicon isolated double quantum dot [PDF]

, 2011
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is ...
A Rossi, Averin D V, D A Williams, G Podd, Grossing G, Grossing G, Huang X, Lee K H, M Tanner, Müller H-O, P Chapman, T Ferrus, Thomson J J   +12 more
core   +2 more sources

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source