Results 61 to 70 of about 83,574 (291)

Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Micro and Nano Engineering
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage.
Kai-Lin Chu, Wenkun He, Faris Abualnaja, Mervyn Jones, Zahid Durrani   +4 more
doaj   +1 more source

Effect of elastic disorder on single-electron transport through a buckled nanotube

Physical Review Research, 2022
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability.
S. S. Evseev, I. S. Burmistrov, K. S. Tikhonov, V. Yu. Kachorovskii   +3 more
doaj   +1 more source

High Temperature Conductance of the Single Electron Transistor

, 1998
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula.
D. S. Golubev, D. V. Averin, G. Baym, G. Göppert, G. Schön, Georg Göppert, H. Grabert, H. Schoeller, Hermann Grabert, J. P. Pekola, P. Joyez, P. Joyez, T. A. Fulton, W. Magnus, X. Wang   +14 more
core   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Single-electron transistor strongly coupled to vibrations: counting statistics and fluctuation theorem

New Journal of Physics, 2013
Using a simple quantum master equation approach, we calculate the full counting statistics of a single-electron transistor strongly coupled to vibrations.
Gernot Schaller, Thilo Krause, Tobias Brandes, Massimiliano Esposito   +3 more
doaj   +1 more source

Radio-frequency operation of a double-island single-electron transistor

, 2004
We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state.
Bladh K., D. J. Reilly, Eto M., Grabert H., Korotkov A. N., Pozar D. M., R. Brenner, T. M. Buehler   +7 more
core   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

ANALYSIS OF TEMPERATURE LIMITATION OF GRAPHENE SINGLE ELECTRON TRANSISTOR

Diyala Journal of Engineering Sciences, 2015
The single-electron transistors are a key element of nano-technology and they are good alternative to field-effect transistors due to high operating speed and power.
Vahideh Khadem Hosseini
doaj  

Anomalous zero-temperature magnetopolaronic blockade of resonant electron tunneling in Majorana-resonant-level single-electron transistor

Condensed Matter Physics, 2018
The magnetopolaronic generalization of a Majorana-resonant-level (MRL) model is considered for a single-level vibrating quantum dot coupled to two half-infinite g=1/2 Tomonaga-Luttinger liquid (TLL) leads.
G.A. Skorobagatko
doaj   +1 more source

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Applied Sciences, 2017
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes.
Golnaz Karbasian, Michael S. McConnell, Hubert George, Louisa C. Schneider, Matthew J. Filmer, Alexei O. Orlov, Alexei N. Nazarov, Gregory L. Snider   +7 more
doaj   +1 more source