Results 71 to 80 of about 83,574 (291)
Metallic single-electron transistor without traditional tunnel barriers
, 2000 We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes.
A. B. Zorin +5 more
core +1 more source
Noncollinear single-electron spin-valve transistors
Physical Review B, 2005 4 pages, 3 ...
Wetzels, W. (author) +2 more
openaire +4 more sources
Advanced Functional Materials, EarlyView.A novel approach for the design of functional semiconductors is presented, which utilizes the excellent optoelectronic properties of layered hybrid perovskites and the possibility to introduce a molecular photoswitch as the organic spacer. This concept is successfully demonstrated on a coumarin‐based system with the possibility to change the bandgap ...
Oliver Treske +4 more
wiley +1 more source
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Nature Communications, 2019 The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix ...
Gwangwoo Kim +20 more
doaj +1 more source
Giant current fluctuations in an overheated single electron transistor
, 2010 Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and
A. Altland +6 more
core +2 more sources
Heat Transistor: Demonstration of Gate-Controlled Electron Refrigeration [PDF]
, 2007 We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal island can be ...
Alexander M. Savin +6 more
core +2 more sources
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Advanced Functional Materials, EarlyView.Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
Current and noise expressions for radio-frequency single-electron transistors
, 2005 We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent perturbations ...
D. Ahn +14 more
core +1 more source
Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4
Advanced Functional Materials, EarlyView.An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante +17 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source