Results 161 to 170 of about 83,574 (291)

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes. [PDF]

Nanoscale Adv
Ohkatsu G, Nishinobo T, Saruyama M, Teranishi T, Majima Y.   +4 more
europepmc   +1 more source

Orientation Engineering of MXene Flakes

Advanced Materials, EarlyView.
Orientation engineering of MXene flakes refers to the transformation of disordered MXene flakes into ordered architectures with optimized multiphysical transport properties. Focusing on this topic, this review outlines key principles, characterization, fabrication strategies, and advanced applications of oriented MXene structures.
Yizhou Wang, Shuo Li, Tianchao Guo, Dekang Zhu, Ning Chu, Noor Albar, Dana Alsulaiman, Husam N. Alshareef   +7 more
wiley   +1 more source

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control

Advanced Materials, EarlyView.
We engineer electrically conductive hydrogels by combining sulfated glycosaminoglycans with semiconducting polymers. These hydrogels bind bioactive proteins, including growth factors, whose release or retention can be modulated by low‐voltage stimulation. The hydrogels are also integrated as 3D channels in organic electrochemical transistors as part of
Teuku Fawzul Akbar, Carlos Alejandro Jimenez‐Rodriguez, Railia Biktimirova, Ilka Hermes, Thomas Kurth, My Duyen Pham, Mikhail Tsurkan, Jens Friedrichs, Francis L. C. Morgan, Hans Kleemann, Olga Guskova, Uwe Freudenberg, Peter Fratzl, Carsten Werner, Christoph Tondera, Ivan R. Minev   +15 more
wiley   +1 more source

Probing Majorana bound states via counting statistics of a single electron transistor. [PDF]

Sci Rep, 2015
Li ZZ, Lam CH, You JQ.
europepmc   +1 more source

Counterion‐Controlled Photocatalytic Doping of Organic Semiconductors

Advanced Materials, EarlyView.
Counterion size is shown to actively control photocatalytic doping in organic semiconductors. Small anions suppress aggregation of acridinium photocatalysts, enhance electron transfer, and dramatically increase doping efficiency. This simple strategy enables conductivities up to 2000 S cm−1 in benchmark polymers, revealing counterions as a powerful yet
Tiefeng Liu, Zesheng Liu, Ihor Sahalianov, Qiao He, Sang Young Jeong, Huotian Zhang, Qifan Li, Chi‐Yuan Yang, Junpeng Ji, Lize Bynens, Wouter Maes, Feng Gao, Han Young Woo, Martin Heeney, Glib Baryshnikov, Mats Fahlman, Simone Fabiano   +16 more
wiley   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

Advanced Materials, EarlyView.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu, Ryan Thompson, C. Willem Rischau, Marli R. Cantarino, Premysl Marsik, Sergey L. Bud'ko, Neven Biškup, María Varela, Yurii G. Pashkevich, Serhii M. Orel, Thomas Prokscha, Andreas Suter, Jiangtao Zhao, Ugwumsinachi Oji, Marco Bonura, Peter Bencok, Zaher Salman, Stefano Gariglio, Christian Bernhard, Subhrangsu Sarkar   +19 more
wiley   +1 more source

Charge Transfer States in Donor–Acceptor Bulk‐Heterojunctions as Triplet–Triplet Annihilation Sensitizer for Solid‐State Photon Upconversion

Advanced Materials Interfaces, EarlyView.
A near‐infrared photosensitizer that facilitates efficient solid‐state photon upconversion by recycling triplets formed within a fullerene‐based donor–acceptor bulk‐heterojunction system is demonstrated. Spectroscopic investigations reveal that the energy of photogenerated charge transfer states of triplet character (3CT) is subsequently transferred to
Maciej Klein, Alexander R. Ireland, Evan G. Moore, Dennis Delic, Ajay K. Pandey   +4 more
wiley   +1 more source

Suppressing Metal–Molecule Charge Transfer With a Phosphorus Interlayer

Advanced Materials Interfaces, EarlyView.
Phosphorus forms stable reconstructions with remarkable properties on various metal substrates. Here, using a spectroscopic approach, its role as an effective buffer layer on Cu(110) is demonstrated, preventing charge transfer to adsorbed Zn‐tetraphenylporphyrins (ZnTPP).
Mattia Bassotti, Luca Floreano, Luca Schio, Sergio Salaverria, Dimas G. de Oteyza, Giacomo Giorgi, Frederik Schiller, Alberto Verdini   +7 more
wiley   +1 more source