Results 211 to 220 of about 11,423 (258)

A high-frequency silicon-graphene-germanium barristor. [PDF]

Nat Commun
Wang X, Sun S, Qiao Z, Jiang H, Li C, Jiang H, Bai J, Song X, Li X, Wang X, Zhu X, Feng S, Li B, Liang J, Wang L, Xue Z, Ohno Y, Gao J, Di Z, Sun D, Liu C.   +20 more
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

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Single Electron Transistor in Aqueous Media

Advanced Materials, 2013
A gold nanoparticle necklace array spanning a ∼30-micrometer-wide channel shows a robust coulomb blockade effect at room temperature with a threshold of 1V in air. When this device is operated in the aqueous solution, a gain of ∼130 fold in conductance is obtained in electrochemical gating, significantly higher than other nanomaterial-based ...
Ravi Saraf, Chichao Yu
exaly   +3 more sources

A New Single Electron Transistor

50th Annual Device Research Conference, 1992
Summary form only given. The authors propose and demonstrate a novel single-electron transistor (SET) where the drain current is controlled by a single electron. This SET is similar to a GaAs-AlGaAs heterostructure modulation-doped FET, except that it has a split gate which electrostatically squeezes a 2-D channel into a 1-D channel, and it also has a ...
Stephen Y. CHOU, Yun WANG
openaire   +1 more source

The single-electron transistor

Reviews of Modern Physics, 1992
The discovery of periodic conductance oscillations as a function of charge density in very small transistors has led to a new understanding of the behavior of electrons in such small structures. It has been demonstrated that, whereas a conventional transistor turns on only once as electrons are added to it, submicronsize transistors, isolated from ...
openaire   +1 more source

Sketched oxide single-electron transistor

Nature Nanotechnology, 2011
Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal ...
Guanglei, Cheng, Pablo F, Siles, Feng, Bi, Cheng, Cen, Daniela F, Bogorin, Chung Wung, Bark, Chad M, Folkman, Jae-Wan, Park, Chang-Beom, Eom, Gilberto, Medeiros-Ribeiro, Jeremy, Levy   +10 more
openaire   +2 more sources

Single-electron transistor backaction on the single-electron box

Physical Review B, 2005
We report an experimental observation of the backaction of a single-electron transistor (SET) measuring the Coulomb staircase of a single-electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb ...
B. A. Turek, K. W. Lehnert, A. Clerk, D. Gunnarsson, K. Bladh, P. Delsing, R. J. Schoelkopf   +6 more
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Silicon Single-Electron Transistors and Single-Electron CCD

MRS Proceedings, 2001
AbstractWe have developed two types of devices for silicon-single-electronics; a single-electron transistor (SET) and a single-electron charge coupled device (CCD). Both devices were fabricated on SOI (silicon on insulator) wafers. For the SET fabrication, we used a novel method called pattern-dependent oxidation (PADOX), which exploits special ...
Yasuo Takahashi, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa   +3 more
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Intrinsic noise of the single-electron transistor

Physical Review B, 1994
The paper is devoted to calculation of the ``classical'' (thermal and/or shot) intrinsic noise of the single-electron transistor (SET) caused by the stochastic character of electron tunneling. Exact solution of the master equation describing the dynamics of the SET is obtained in the frequency representation.
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A SINGLE ELECTRON TRANSISTOR IN THE SUPERCONDUCTING STATE

Sensors and Microsystems, 2000
We fabricated and tested a single electron transistor (SET) and we succeeded in operating it between 0.3 K and 1.4 K The SET island and the tunnel junctions electrodes are made by Al, while the tunnel insulating layer is AlOx. The SET is in the superconducting state because at the operating temperature the Al becomes superconducting.
Leoni R, Castellano M G, Pasqui C, Torrioli G, Carelli P, Chiarello F, Cosmelli C   +6 more
openaire   +2 more sources