Results 221 to 230 of about 11,423 (258)
Some of the next articles are maybe not open access.
2015
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
openaire +1 more source
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
openaire +1 more source
Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors
Japanese Journal of Applied Physics, 1997We have performed Monte Carlo studies of complementary capacitively coupled single-electron transistor (complementary C-SET) logic gates for single-electron digital logic circuits. The simulations carried out with various types of complementary C-SET logic gates showed that serial connections of single-electron transistors necessary for multi ...
Jeong, MY, Jeong, YH, Hwang, SW, Kim, DM
openaire +2 more sources
Progress on single-electron transistors
2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010Large scale production of single-electron transistors (SETs) is now possible with a standard fully-depleted SOI process. Although the operating temperature is limited to approximately 10 K for now, this opens new opportunities for implementing on-chip hybrid designs combining the benefits of Coulomb blockade with regular FET-based electronics. Moreover,
Jehl X., Sanquer M.
openaire +1 more source
1993
Contains a description of one research project and a list of publications. ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS-88-13250 ; National Science Foundation Grant ECS-92 ...
Kastner, Marc A. +4 more
openaire +1 more source
Contains a description of one research project and a list of publications. ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS-88-13250 ; National Science Foundation Grant ECS-92 ...
Kastner, Marc A. +4 more
openaire +1 more source
1991
Contains description of one research project. ; Joint Services Electronics Program Contract DAAL03-89-C-0001 ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS 88 ...
Kastner, Marc A. +6 more
openaire +1 more source
Contains description of one research project. ; Joint Services Electronics Program Contract DAAL03-89-C-0001 ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS 88 ...
Kastner, Marc A. +6 more
openaire +1 more source
An SOI single-electron transistor
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 2003Single-electron transistors (SETs) are currently being investigated by many research groups as possible devices for ultra-high-density, low-power information processing or storage systems. A single-electron transistor consists of two tunnel junctions (TJ) connected to the source and the drain, a center floating node and a capacitance connected to the ...
null Xiaohui Tang +4 more
openaire +1 more source
Ferromagnetic single electron transistor
Solid-State Electronics, 1998Abstract We studied magnetotransport properties of a single electron transistor (SET) consist of Ni/NiO/Co ultrasmall tunnel junctions. At high temperatures or at high bias conditions, the SET shows magnetoresistance (MR) of about 4% which originates from the magnetic valve effect.
Keiji Ono +2 more
openaire +1 more source
1992
Contains description of one research project and a list of publications. ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS 88-13250 ; National Science Foundation Grant ECS 92 ...
Kastner, Marc A. +3 more
openaire +1 more source
Contains description of one research project and a list of publications. ; Joint Services Electronics Program Contract DAAL03-92-C-0001 ; National Science Foundation Grant ECS 88-13250 ; National Science Foundation Grant ECS 92 ...
Kastner, Marc A. +3 more
openaire +1 more source
Single-electron transistor logic
Applied Physics Letters, 1996We present the results of numerical simulations of a functionally complete set of complementary logic circuits based on capacitively coupled single-electron transistors (CSETs). The family includes an inverter/buffer stage, as well as two-input NOR, NAND, and XOR gates, all using similar tunnel junctions, and the same dc bias voltage and logic levels ...
R. H. Chen +2 more
openaire +1 more source
1990
Contains description of one research project. ; Joint Services Electronics Program Contract DAAL03-89-C-0001 ; National Science Foundation Grant ECS 88 ...
Kastner, Marc A. +7 more
openaire +1 more source
Contains description of one research project. ; Joint Services Electronics Program Contract DAAL03-89-C-0001 ; National Science Foundation Grant ECS 88 ...
Kastner, Marc A. +7 more
openaire +1 more source

