Results 21 to 30 of about 11,423 (258)
Single-electron tunneling by using a two-dimensional Corbino nano-scale disk
AIP Advances, 2015 We investigate a single-electron tunneling effect of two-dimensional electron systems formed in the Corbino nano-scale disk. By controlling bias and gate voltages, the transistor using this effect is able to control electrons one by one.
H. Taira, A. Suzuki
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Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
Micromachines, 2023 A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
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Tunable Graphene Single Electron Transistor [PDF]
Nano Letters, 2008 We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate.
Stampfer C +5 more
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The Stability Diagram of a Single-Electron Transistor
Science Technology and Engineering Journal (STEJ), 2021 A single-electron transistor (SET) is a promising technology, superseding a traditional transistor. This device needs to be accurately controlled by external voltage sources because this sophisticated structure is operated in the submicron ...
Titipong Phoophathong +1 more
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Studying the single-electron transistor by photoionization [PDF]
Physical Review B, 2009 We present theoretical results demonstrating that photoionization can be a useful tool for investigating single--electron transistors. Suggestions are given on how to conduct experiments using photoionization alone or in combination with transport measurements.
Baldea, Ioan, Koppel, Horst
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A single electron transistor charge sensor in strong rf fields
AIP Advances, 2018 We measure the charge sensitivity, Se, of a single electron transistor (SET) in the presence of strong (Vrf ∼ e/Cg) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where Cg is the gate capacitance.
R. M. Lewis, C. T. Harris, E. A. Shaner
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Thermal Conductance of a Single-Electron Transistor [PDF]
Physical Review Letters, 2017 We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points.
Dutta, B. +10 more
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Voltage-controlled Hubbard spin transistor
Physical Review Research, 2021 Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going
Rozhin Yousefjani +2 more
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International Journal of Technology, 2014 Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the ...
Arief Udhiarto +3 more
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Modeling and the analysis of control logic for a digital PWM controller based on a nano electronic single electron transistor [PDF]
Serbian Journal of Electrical Engineering, 2008 This paper describes the modelling and the analysis of control logic for a Nano-Device- based PWM controller. A comprehensive simple SPICE schematic model for Single Electron transistor has been proposed. The operation of basic Single Electron Transistor
Rathnakannan Kailasam, Ranjan Vanaja
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