Results 51 to 60 of about 11,423 (258)

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Effect of elastic disorder on single-electron transport through a buckled nanotube

Physical Review Research, 2022
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability.
S. S. Evseev, I. S. Burmistrov, K. S. Tikhonov, V. Yu. Kachorovskii   +3 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Micro and Nano Engineering
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage.
Kai-Lin Chu, Wenkun He, Faris Abualnaja, Mervyn Jones, Zahid Durrani   +4 more
doaj   +1 more source

Anomalous zero-temperature magnetopolaronic blockade of resonant electron tunneling in Majorana-resonant-level single-electron transistor

Condensed Matter Physics, 2018
The magnetopolaronic generalization of a Majorana-resonant-level (MRL) model is considered for a single-level vibrating quantum dot coupled to two half-infinite g=1/2 Tomonaga-Luttinger liquid (TLL) leads.
G.A. Skorobagatko
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

ANALYSIS OF TEMPERATURE LIMITATION OF GRAPHENE SINGLE ELECTRON TRANSISTOR

Diyala Journal of Engineering Sciences, 2015
The single-electron transistors are a key element of nano-technology and they are good alternative to field-effect transistors due to high operating speed and power.
Vahideh Khadem Hosseini
doaj  

Single-electron transistor strongly coupled to vibrations: counting statistics and fluctuation theorem

New Journal of Physics, 2013
Using a simple quantum master equation approach, we calculate the full counting statistics of a single-electron transistor strongly coupled to vibrations.
Gernot Schaller, Thilo Krause, Tobias Brandes, Massimiliano Esposito   +3 more
doaj   +1 more source

One SYK single electron transistor

Lithuanian Journal of Physics, 2020
We study the behaviour of a single electron transistor (SET) represented by a dissipative tunnel junction between a pair of quantum dots described by two (possibly, different) Sachdev–Ye–Kitaev (SYK) models. A combined influence of the soft collective charge and energy modes on charge transport is discussed, alongside the competing effects of the ...
openaire   +2 more sources

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

Advanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo   +14 more
wiley   +1 more source