Results 61 to 70 of about 11,423 (258)

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

open access: yesNature Communications, 2019
The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix ...
Gwangwoo Kim   +20 more
doaj   +1 more source

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

open access: yesApplied Sciences, 2017
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes.
Golnaz Karbasian   +7 more
doaj   +1 more source

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

open access: yesAdvanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Programmable 2D Magnetic Clusterphenes With High Curie Temperature and Strong Magnetic Anisotropy via Cluster Assembly and Ligand Synergy

open access: yesAdvanced Functional Materials, EarlyView.
Programmable 2D magnetic clusterphenes are realized through a ligand‐mediated cluster‐assembly strategy. Direct linking of magnetic superatomic clusters enhances electron delocalization and symmetry breaking, enabling the concurrent strengthening of magnetic exchange interactions and spin–orbit coupling.
Junxiang Fu   +13 more
wiley   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

open access: yesAdvanced Electronic Materials
Ultra‐sensitive short‐wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS‐compatible silicon technological platform has been challenging due to the low ...
Pooja Sudha   +3 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

An ab Initio Calculations of Single-Electron Transistor Based Single Walled Carbon Nanotube of Ultra-Small Diameter

open access: yesEast European Journal of Physics, 2020
In this paper, we have investigated the charge stability diagram and conductance dependence on source drain bias and gate voltage of carbon nanotube based single electron transistor (SET) by using first principle calculations.
Sraja Chauhan, Ajay Singh Verma
doaj   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang   +4 more
wiley   +1 more source

Single Electron Transistor: Applications & Problems

open access: yesInternational Journal of VLSI Design & Communication Systems, 2010
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands".
Om Kumar, Manjit Kaur
openaire   +2 more sources

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

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