Results 61 to 70 of about 83,574 (291)
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
Advanced Functional Materials, EarlyView.π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Micro and Nano EngineeringHybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage.
Kai-Lin Chu +4 more
doaj +1 more source
High Temperature Conductance of the Single Electron Transistor
, 1998 The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula.
D. S. Golubev +14 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
New Journal of Physics, 2013 Using a simple quantum master equation approach, we calculate the full counting statistics of a single-electron transistor strongly coupled to vibrations.
Gernot Schaller +3 more
doaj +1 more source
Radio-frequency operation of a double-island single-electron transistor
, 2004 We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state.
Bladh K. +7 more
core +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
Advanced Functional Materials, EarlyView.The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
ANALYSIS OF TEMPERATURE LIMITATION OF GRAPHENE SINGLE ELECTRON TRANSISTOR
Diyala Journal of Engineering Sciences, 2015 The single-electron transistors are a key element of nano-technology and they are good alternative to field-effect transistors due to high operating speed and power.
Vahideh Khadem Hosseini
doaj
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Nature Communications, 2019 The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix ...
Gwangwoo Kim +20 more
doaj +1 more source
Applied Sciences, 2017 Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes.
Golnaz Karbasian +7 more
doaj +1 more source