Results 81 to 90 of about 83,574 (291)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Detection of On-Chip Generated Weak Microwave Radiation Using Superconducting Normal-Metal SET

open access: yesApplied Sciences, 2016
The present work addresses quantum interaction phenomena of microwave radiation with a single-electron tunneling system. For this study, an integrated circuit is implemented, combining on the same chip a Josephson junction (Al/AlO
Behdad Jalali-Jafari   +2 more
doaj   +1 more source

Cotunneling at resonance for the single-electron transistor

open access: yes, 1997
We study electron transport through a small metallic island in the perturbative regime. Using a recently developed diagrammatic technique, we calculate the occupation of the island as well as the conductance through the transistor in forth order in the ...
D. S. Golubev   +18 more
core   +1 more source

A single photoelectron transistor for quantum optical communications [PDF]

open access: yes, 2002
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be
Bandaru, Prabhakar   +5 more
core   +3 more sources

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

open access: yesAdvanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

open access: yesAdvanced Electronic Materials
Ultra‐sensitive short‐wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS‐compatible silicon technological platform has been challenging due to the low ...
Pooja Sudha   +3 more
doaj   +1 more source

Design and Analysis of Energy Efficient Domino Logic Architectures with Single Electron Transistors in Pull Down Network and Keeper Topology

open access: yesEAI Endorsed Transactions on Energy Web, 2020
Nanotechnology and VLSI goes hand in hand. Modernization of electronics and communication systems has demanded for compactness of the devices with low power and high speed.
B. AnishFathima, M. Mahaboob
doaj   +1 more source

Single-dopant resonance in a single-electron transistor

open access: yes, 2010
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector.
B. Roche   +9 more
core   +1 more source

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

open access: yesAdvanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan   +6 more
wiley   +1 more source

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

open access: yesNature Communications, 2018
The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field ...
Tao He   +9 more
doaj   +1 more source

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