Results 11 to 20 of about 5,264,207 (202)

Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology [PDF]

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015
Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems.
Pellion, D, Jradi, K, Brochard, Nicolas, Prêle, D, Ginhac, Dominique   +4 more
openaire   +5 more sources

Crosstalk Characterization of Single-photon Avalanche Diode (SPAD) Arrays in CMOS 150nm Technology [PDF]

Procedia Engineering, 2014
AbstractIn this paper, crosstalk characterization results of single-photon avalanche diode (SPAD) arrays in CMOS 150nm technology are reported and discussed. SPADs are implemented in two different sizes (15.6 and 25.6μm pitch) and three guard ring widths (0.6, 1.1 and1.6μm).
Xu, Hesong, Pancheri, Lucio, Braga, Leo H. C., Dalla Betta, Gian Franco, Stoppa, David, Huf Campos Braga, Leo   +5 more
openaire   +3 more sources

Design Criteria for InGaAs/InP Single-Photon Avalanche Diode

IEEE Photonics Journal, 2013
We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing
Fabio Acerbi, Michele Anti, Alberto Tosi, Franco Zappa   +3 more
doaj   +2 more sources

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

IEEE Photonics Journal, 2020
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie, Haochen Li, Jamal Ahmed, Diana L. Huffaker   +3 more
doaj   +1 more source

A Compact High-Speed Active Quenching and Recharging Circuit for SPAD Detectors

IEEE Photonics Journal, 2020
A compact high-speed active quenching and recharging circuit (AQRC) is proposed for single-photon avalanche diode (SPAD) detectors fabricated in standard 0.18 μm CMOS technology.
Yue Xu, Jiyuan Lu, Zhong Wu
doaj   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source

Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

Instruments, 2019
We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications.
Jinsoo Rhim, Xiaoge Zeng, Zhihong Huang, Sai Rahul Chalamalasetti, Marco Fiorentino, Raymond Beausoleil, Myung-Jae Lee   +6 more
doaj   +1 more source

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

Sensors, 2021
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology.
Mohammadreza Dolatpoor Lakeh, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, Wilfried Uhring   +8 more
doaj   +1 more source

Sub-Pixel Scanning High-Resolution Panoramic 3D Imaging Based on a SPAD Array

IEEE Photonics Journal, 2021
3D imaging based on single-photon avalanche diode (SPAD) arrays is of interest in many applications. Limited by the small array size and low fill-factor of the available SPAD array, it is difficult for SPAD array-based lidars to achieve high-resolution ...
Ruikai Xue, Yan Kang, Tongyi Zhang, Lifei Li, Wei Zhao   +4 more
doaj   +1 more source

Efficient random number generation techniques for CMOS single-photon avalanche diode array exploiting fast time tagging units

Physical Review Research, 2020
This work presents a technique to produce random bits by exploiting single-photon time of arrival. Two quantum random number generator (QRNG) devices based on the field programmable gate array (FPGA) technology are presented: Randy, which uses one ...
Andrea Stanco, Davide G. Marangon, Giuseppe Vallone, Samuel Burri, Edoardo Charbon, Paolo Villoresi   +5 more
doaj   +1 more source