Results 11 to 20 of about 1,279 (175)

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

open access: yesIEEE Photonics Journal, 2020
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie   +3 more
doaj   +1 more source

A Compact High-Speed Active Quenching and Recharging Circuit for SPAD Detectors

open access: yesIEEE Photonics Journal, 2020
A compact high-speed active quenching and recharging circuit (AQRC) is proposed for single-photon avalanche diode (SPAD) detectors fabricated in standard 0.18 μm CMOS technology.
Yue Xu, Jiyuan Lu, Zhong Wu
doaj   +1 more source

Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

open access: yesInstruments, 2019
We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications.
Jinsoo Rhim   +6 more
doaj   +1 more source

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

open access: yesSensors, 2021
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology.
Mohammadreza Dolatpoor Lakeh   +8 more
doaj   +1 more source

Sub-Pixel Scanning High-Resolution Panoramic 3D Imaging Based on a SPAD Array

open access: yesIEEE Photonics Journal, 2021
3D imaging based on single-photon avalanche diode (SPAD) arrays is of interest in many applications. Limited by the small array size and low fill-factor of the available SPAD array, it is difficult for SPAD array-based lidars to achieve high-resolution ...
Ruikai Xue   +4 more
doaj   +1 more source

Efficient random number generation techniques for CMOS single-photon avalanche diode array exploiting fast time tagging units

open access: yesPhysical Review Research, 2020
This work presents a technique to produce random bits by exploiting single-photon time of arrival. Two quantum random number generator (QRNG) devices based on the field programmable gate array (FPGA) technology are presented: Randy, which uses one ...
Andrea Stanco   +5 more
doaj   +1 more source

Pion Detection Using Single Photon Avalanche Diodes

open access: yesSensors, 2023
We present the first reported use of a CMOS-compatible single photon avalanche diode (SPAD) array for the detection of high-energy charged particles, specifically pions, using the Super Proton Synchrotron at CERN, the European Organization for Nuclear ...
Anthony Frederick Bulling, Ian Underwood
doaj   +1 more source

Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology [PDF]

open access: yesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015
Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems.
Pellion, D   +4 more
openaire   +3 more sources

Twenty Years of Rad-Hard K14 SPAD in Space Projects

open access: yesSensors, 2015
During last two decades, several photon counting detectors have been developed in our laboratory. One of the most promising detector coming from our group silicon K14 Single Photon Avalanche Diode (SPAD) is presented with its valuable features and space ...
Vojtěch Michálek   +2 more
doaj   +1 more source

Simulation Study of Silicon-Based Single-Photon Avalanche Diodes with Double Buried Layers and Deep Trench Electrodes

open access: yesCrystals, 2021
In this paper we present a study of a silicon-based Single-Photon Avalanche Diode (SPAD) in the near-infrared band with double buried layers and deep trench electrodes fabricated by the complimentary metal–oxide semiconductor (CMOS) technology.
Yanyan Du, Bo Li, Xu Wang
doaj   +1 more source

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