Results 171 to 180 of about 205,983 (305)

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

open access: yesAdvanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan   +9 more
wiley   +1 more source

?????? ??????????????? ??????????????? SiO2 ????????? ????????? ??????

open access: yes, 2017
????????? ?????????????????? ????????? ?????? ??????????????? ?????????????????? ???????????? ?????? ????????? ??? ?????????????????? ????????? ???????????? ??????. ?????? ??????????????? ?????? ????????? ?????? ????????? ??????????????? ????????? ???????
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core  

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Stress Relaxation Mechanism by Strain in the Si-SiO2 System and Its Influence on the Interface

open access: yes
The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented.
Daukšta, Edvīns   +5 more
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Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

open access: yesAdvanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov   +8 more
wiley   +1 more source

Stresses Relaxation Mechanism in the Si-SiO2 System and Its Influence on the Interface Properties

open access: yes
The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, scanning electron microscopy and samples deflection are presented.
Daukšta, Edvīns   +5 more
core  

Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

open access: yes, 2014
Kyu Hwan Shim,1 John Hulme,1 Eun Ho Maeng,2 Meyoung-Kon Kim,3 Seong Soo A An1 1Department of Bionano Technology, Gachon Medical Research Institute, Gachon University, Sungnam-si, 2Department of Analysis, KTR, Kimpo, Gyeonggi-do, 3Department of ...
Shim KH   +4 more
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Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

open access: yesAdvanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho   +3 more
wiley   +1 more source

Undetactable levels of genotoxicity of SiO2 nanoparticles in in vitro and in vivo tests [Erratum]

open access: yes, 2015
Kwon JY, Kim HL, Lee JY, et al. Int J Nanomedicine. 2014;9(Suppl 2):173–181.The title of the paper “Undetactable levels of genotoxicity of SiO2 nanoparticles in in vitro and in vivo tests” should read “Undetectable levels of ...
Kim HL   +11 more
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