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Table-based FET model assembled from small-signal models

Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194), 2002
A data-table based large-signal MESFET model is presented based on an ensemble of bias-dependent small-signal equivalent circuits. The model is capable of accurate simulation of small-signal S-parameters over the data-acquisition bias range. In addition to the dc current sources, the model contains two quasi-static charge sources and RF current sources,
C.J. Wei, Y.A. Tkachenko, D. Bartle
openaire   +1 more source

Compact small-signal model for RF FinFETs

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2012
Modeling of the small-signal equivalent circuit of SOI FinFETs through SPICE simulations is presented. A compact model implemented in Verilog-A predicts well the DC characteristics of RF SOI FinFETs and allows the extraction of the intrinsic conductance, transconductance and capacitances at any selected operating point.
J. Alvarado   +6 more
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Small signal modeling of the MOSOS capacitor

IEEE SOS/SOI Technology Conference, 2003
Summary form only given. The high-frequency small-signal sinusoidal steady-state response of the 2-terminal MOSOS (metal-oxide-silicon-oxide-silicon) capacitor is solved numerically using perturbation analysis of the basic semiconductor equations. The model includes the effects of a floating semiconductor region, interface traps and nonuniform doping ...
M. Gaitan, P. Roitman
openaire   +1 more source

Small-signal models of quasi-resonant converters

ISIE '97 Proceeding of the IEEE International Symposium on Industrial Electronics, 2002
Small-signal models of quasi-resonant (QR) power converters are obtained by using state-space averaging. The control-to-output transfer function and the audio susceptibility are easily obtained from these models. The frequency response derived from the theoretical model of a buck QR power converter with zero-voltage-switching (ZVS) is compared with ...
J.M.F.D. Costa, M.M. Silva
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High frequency small signal modeling of CNTFET

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, 2013
In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed.
Soheli Farhana   +2 more
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A new SEPIC inverter: Small signal modeling

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013
This paper presents a new inverter technology that is designed based on SEPIC converter. Small signal model and transfer functions of the inverter are obtained. The system demonstrates the existence of a non-minimum phase zero in positive peak and shift of that zero to left half plane to make the negative peak transfer function a minimum phase behavior.
Shweta Hegde, Afshin Izadian
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Small-Signal Model of LLC LED Driver

2018 IEEE Industry Applications Society Annual Meeting (IAS), 2018
This paper presents the small-signal model of the full-bridge LLC LED driver for system analysis. By using the Taylor series model, a V-I curve lookup table is generated to model the LED. The LED array can be built by a simple equivalent circuit composed of one LED model and two dependence sources for circuit simulation.
Ray-Lee Lin   +2 more
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Small-Signal Modeling of LLC Resonant Converters

2020 IEEE International Conference on Information Technology,Big Data and Artificial Intelligence (ICIBA), 2020
Owing to the advantages of high efficiency and high power density, LLC resonant converters have been widely used. Generally, in order to design the closed-loop regulator, the small-signal model is necessary. Nevertheless, the small-signal model of LLC resonant converter is usually complex and inconvenient to be used to design regulators. In this paper,
Yixiao Ma   +5 more
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Small signal lumped model for IMPATT diodes†

International Journal of Electronics, 1970
A small signal lumped model of a general IMPATT diode is presented. By applying state space analysis techniques the model is used to predict the small signal impedance of both pn and pin IMPATT diodes as a function of frequency and d.c. bias current.
J. A. C. STEWART   +2 more
openaire   +1 more source

FET Small Signal Modeling and Parameter

2010
In this chapter, we introduce small-signal modeling and parameter extraction technique for FETs, an III-V compound semiconductor device pseudomorphic high electron-mobility transistor (PHEMT) is used as an example. The parameter extraction includes pad capacitances, extrinsic inductances, extrinsic resistances, and intrinsic elements extractions.
openaire   +1 more source

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