Results 161 to 170 of about 3,762,663 (201)
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Small-signal MOSFET one-dimensional admittance model
Solid-State Electronics, 1984Abstract A small-signal a.c. admittance ( y -parameter) circuit model is developed by physical analysis of the basic MOSFET structure by using a small signal analysis. The frequency dependent solutions for the derived set of equations for the y -parameters yield results that match experimental data extremely well.
null Zhang Yimen, Thomas A. DeMassa
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Small signal modeling and analysis of synchronverters
2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC), 2015Synchronverters are inverters that mimic the synchronous generators. The synchronverter can be easily operated in both island mode and on-grid mode, which is very suitable for the Micro-grid. A new method to get the small signal model of the synchronverter is proposed in this paper.
null Zhou Wei +2 more
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Small signal model for low power DSP
1995 IEEE Symposium on Low Power Electronics. Digest of Technical Papers, 2002We describe a technique which reduces power consumption in pipelined DSP circuits by mapping full precision operations to small precision operations, using adaptive delta modulation to reduce the signal size. The discrete cosine transform example is evaluated considering issues such as power, area, delay, latency, accuracy of the system and the ...
H. Mehta, R.M. Owens, M.J. Irwin
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Small-signal model of resonant link converter:
2003The conventional small signal modeling techniques as are state space averaging and injecting-absorbed current method are not appropriate for using in converters based on high frequency resonant link (HFRL). The mentioned methods are appropriate for processes where the switching frequency is constant.
Kovačič, Robert, Milanovič, Miro
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Small-signal modeling of LCC resonant converter
PESC `92 Record. 23rd Annual IEEE Power Electronics Specialists Conference, 2003Small-signal modeling based on the extended describing function concept is applied to LCC resonant converters. The analytical model developed includes both frequency and phase-shift control. Small-signal equivalent circuit models are also derived and implemented in PSPICE. The models ae in good agreement with the measurement data. >
E.X. Yang, F.C. Lee, M.M. Jovanovic
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Small-Signal Modeling of Series Resonant Converter
2007 7th International Conference on Power Electronics and Drive Systems, 2007Based on the basic modeling approach, a new small-signal modeling technique applied to the series resonant converters is presented and the models are in good agreement with the simulation and measurement results.
Weiping Zhang, Peng Mao, Yuanchao Liu
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High electron mobility transistor small signal model
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004The small signal model of the ATF-36077 high electron mobility transistor is presented for both packaged and unpackaged cases. The model parameter extraction procedure is presented. It is shown that using the transistor without its package gives the possibility to expand the amplifier frequency range more than twice.
P.A. Yemtsev +3 more
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Small-signal nonlinear modeling of television IOTs
IEEE Transactions on Broadcasting, 2002The inductive output tube (IOT) is a high power vacuum tube amplifier popularly used in UHF television broadcasting. A small-signal nonlinear model is presented for the IOT. Several simplifying assumptions are made to make the proposed model more tractable mathematically. Component values are then assigned to this simplified model based on measured IOT
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Small signal modelling of HVDC transmission systems
Seventh International Conference on AC and DC Transmission, 2001An exact small signal linear model of the HVdc converter has been recently published, and this paper describes two applications of the model. The first application is the calculation of steady state harmonic levels in the presence of unbalanced ac systems.
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Limiting amplitude for MOSFET small-signal models
Proceedings of the IEEE, 1967By making use of an arcsine model to represent the transfer characteristic of a MOSFET stage, a relation is derived that provides the peak amplitude level permissible for gross deviation from linearity to be limited to a preassigned value. The large-signal model is specified by two easily determined parameters.
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