Results 191 to 200 of about 226,430 (303)

Antarctica: modelling [PDF]

, 2004
Huybrechts, Philippe
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Multimodal Shared Autonomy for Heavy-Load UAV Operations with Physics-Aware Cooperative Control. [PDF]

Sensors (Basel)
Gao X, Wu J, Wang Y, Cao C, Wang L, Wang B, Zhang Y.   +6 more
europepmc   +1 more source

Scalable Polyelectrolyte Complex‐Based Sorbent With Hourly Sorption−Desorption Cycles for Multicyclic Atmospheric Water Harvesting in Arid Environments

Advanced Functional Materials, EarlyView.
A polyelectrolyte complex‐based sorbent is produced by scalable, environmentally benign aqueous phase inversion. Its porous, LiCl‐ and GO‐integrated architecture enables hourly adsorption−desorption cycles at low relative humidity (RH < 30%). A large‐scale prototype achieves multicyclic, solar‐driven atmospheric water harvesting of 1.37 L kg−1 day−1 ...
Seung‐Hwan Oh, Incheol Heo, Won Cheol Yoo, Soo‐Hyung Choi   +3 more
wiley   +1 more source

Improved one-dimensional residual network high-voltage DC diagnosis for high-precision fault identification. [PDF]

PLoS One
Li R, Zhang X, Hao W, Wang T.
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Closed loop text guided framework for lung cancer lesion segmentation and quantification. [PDF]

NPJ Digit Med
Wang S, Wang Z, Men W, Song Z, Hu D, Liu T, Wang B, Kong D, Li X, Ren K, Shao M.   +10 more
europepmc   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Thirty years of glacier grounding line retreat in Antarctica. [PDF]

Proc Natl Acad Sci U S A
Rignot E, Scheuchl B, Barre JB, Brancato V, Charrier L, Chen H, Ciraci E, Dinh A, Herreid S, Jeong S, Li X, Mitchell T, Mohajerani Y, Shamsian S, Tolpekin V, Velicogna I, Wollersheim M.   +16 more
europepmc   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source