Results 261 to 270 of about 171,924 (301)

A Solid-State Variable Resistor Using a Junction FET

IEEE Transactions on Parts, Hybrids, and Packaging, 1976
A noncontact variable resistor having fast response and small nonlinear distortion is needed for applications such as autoattenuators or autoequalizers. For these purposes, the voltage controlled variable resistor (VCR) based on the junction FET was investigated.
E. Sugita, T. Yasuda, T. Matsumoto
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Solid State Lighting Stress and Junction Temperature Evaluation on Operating Power

2013 UKSim 15th International Conference on Computer Modelling and Simulation, 2013
LEDs are being utilized as lighting source due to its superior advantages over incandescent lamps in terms of higher efficiency, brighter light emission and longer lifetime. However, the reliability and efficiency of the LED is dependent on the junction temperature of the LED chip.
Zaliman Sauli, Vithyacharan Retnasamy, Rajendaran Vairavan, Wan Mokhdzani Wan Nor Haimi, Hussin Kamarudin, Neoh Fung Yih, Nazuhusna Khalid   +6 more
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Readout methods and devices for Josephson-junction-based solid-state qubits [PDF]

Journal of Physics Condensed Matter, 2006
20 pages, 7 figures. To be published in J.
Göran Johansson, V S Shumeiko, G Wendin   +2 more
exaly   +3 more sources

III-nitride tunnel junctions for efficient solid state lighting

SPIE Proceedings, 2014
We discuss the design and demonstration ultra-low resistance III-nitride tunnel junctions, and how tunnel junctions could solve the long-standing problem of efficiency droop in solid state lighting. We have used nanoscale band engineering based on polarization and mid-gap states to reduce tunneling resistance by four orders of magnitude.
Rajan, Siddharth, Krishnamoorthy, Sriram, Akyol, Fatih   +2 more
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Direct Observation of Large Quantum Interference Effect in Anthraquinone Solid-State Junctions

Journal of the American Chemical Society, 2013
Quantum interference in cross-conjugated molecules embedded in solid-state devices was investigated by direct current-voltage and differential conductance transport measurements of anthraquinone (AQ)-based large area planar junctions. A thin film of AQ was grafted covalently on the junction base electrode by diazonium electroreduction, while the ...
Rabache, Vincent, Chaste, Julien, Petit, Philippe, Della Rocca, Maria Luisa, Martin, Pascal, Lacroix, Jean-Christophe, Mccreery, Richard, Lafarge, Philippe   +7 more
openaire   +2 more sources

Experimental analysis of the strength of silver–alumina junction elaborated at solid state bonding

Materials & Design, 2011
Abstract The mechanisms of ceramics–metal assemblies, particularly silver and alumina, can be better understood by studying the strength of their adhesion. These two materials are a priori non-reactive, their thermodynamic work of adhesion is low and the difference between their thermal coefficients of expansion in very considerable.
B Serier, B Bachir Bouiadjra, M Belhouari   +2 more
exaly   +2 more sources

Spin-torque switchable perpendicular magnetic junctions for solid-state memory

69th Device Research Conference, 2011
PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.
J. Z. Sun, R. P. Robertazzi, J. J. Nowak, P. L. Trouilloud, G. Hu, M. C. Gaidis, S. L. Brown, D. W. Abraham, E. J. O'Sullivan, W. J. Gallagher, D. C. Worledge, A. D. Kent   +11 more
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Solid-state and liquid-junction photovoltaic properties of some polar dyes

Faraday Discussions of the Chemical Society, 1980
A number of solid-state Schottky barrier cells of the type Al/Al2O3/merocyanine, I2/Au and liquid-junction cells of the type metal/merocyanine/redox electrolyte/Pt have been prepared. Their photovlotaic behaviour depends strongly on the ionisation potential of the merocyanine dye. Doping the dye is crucial to the generation of efficient cells.
Geoffrey A. Chamberlain, Richard E. Malpas   +1 more
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Analysis of the frequency response of schottky junctions in solid-state ionics

Applied Physics A Solids and Surfaces, 1992
The frequency response of a monocrystal with the presence of intrinsic space-charge layers beside two non-blocking electrodes is considered. It is assumed that only one type of charge carriers is mobile. For zero frequency an analytical expression of the impedance, similar to that of semiconductors devices, is obtained.
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Fabrication of Multiple Junctions in Semiconductors by Surface Melt and Diffusion in the Solid State

Journal of Applied Physics, 1957
Techniques are described for the preparation of multiple junction structures in semiconductors by solid state diffusion of impurities from a region of a doubly doped crystal into an adjacent region of different impurity concentrations. The change in impurity concentrations from one region to the other is achieved initially by surface melting and ...
K. Lehovec, A. Levitas
openaire   +1 more source