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Secondary Ion Mass Spectrometry

Vacuum, 1994
When a solid target is bombarded by ions having energies of several keV, different complex processes may occur simultaneously. When the ion energy is low (typically less than 2 keV), the target surface can scatter the incident ions by an elastic collision mechanism. Analysis of the energetics of this collision is called ion scattering spectroscopy ISS,
Grimblot, J., Abon, M.
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Secondary Ion Mass Spectrometry

2014
In Secondary Ion Mass Spectrometry (SIMS) a focused beam of energetic ions (so-called primary ions) is targeted onto the surface of a solid sample. Primary ions dissipate their energy, leading to the sputtering and ionisation of the outmost atoms of the sample surface. The resulting secondary ions are accelerated and transferred to a magnetic analyser.
Sangély, L.   +11 more
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Secondary Ion Mass Spectrometry

Annual Review of Materials Science, 1983
Secondary ion mass spectrometry (SIMS) is a technique for surface and thin-film analysis with a long history and a mature instrumental base dating from the early 1960s, which nevertheless has only recently achieved broad credibility as an analytical technique. This lack of acceptance stems from the complexity ofthe sputtering and ion emission processes,
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Secondary ion mass spectrometry

Vacuum, 1984
Abstract The CAMECA IMS 300 instrument uses a primary beam of oxygen, argon or nitrogen ions to give secondary ion emission from the sample surface. The resulting ionic species are identified by mass spectrometry and selectively transmitted to form images of their distribution in the surface of the specimen, or to provide measures of the elemental ...
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Aspects of quantitative secondary ion mass spectrometry

Nuclear Instruments and Methods, 1980
Abstract The present state of quantitative secondary ion mass spectrometry (SIMS) is analysed critically. Because of the strong gain in sensitivity obtained by loading the instantaneous sample surface with either oxygen or cesium, chemically enhanced secondary ion emission is discussed almost exclusively.
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Instrumental aspects of secondary ion mass spectrometry and secondary ion imaging mass spectrometry

Vacuum, 1972
Abstract A short survey of the varieties of the Secondary Ion Mass Spectrometry (SIMS) known at present is given. The principle of quantitative analysis with respect to thin film analysis is discussed. The properties of SIMS and SIIMS (Secondary Ion Imaging Mass Spectrometry) are compared with those of Electron Microprobe Analysis.
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Secondary Ion Mass Spectrometry Imaging

Applied Spectroscopy Reviews, 1994
Introduction Secondary ion mass spectrometry (SIMS) is a chemical analysis technique that employs mass spectrometry to analyze solid and low volatility liquid samples [1]. Although there are numerous configurations of SIMS instrumentation, the fundamental basis of SIMS analyses is the measurement of the mass and intensity of secondary ions produced in ...
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Molecular secondary ion mass spectrometry

Analytical Chemistry, 1980
R J, Day, S E, Unger, R G, Cooks
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SIMS — Secondary Ion Mass Spectrometry

1992
Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterising the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O 2 + , Cs+, Ar+ but also ions such as Ga+, Xe+, O-, C m m + and SF 6 + are used to erode the sample surface and the secondary elemental or cluster ions formed from the target
R. J. MacDonald, B. V. King
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