Results 141 to 150 of about 62,736 (280)

Perpendicular Amplitude Correction Coefficients for 1,3-Butadiene from Spectroscopic Data. [PDF]

open access: yesActa Chemica Scandinavica, 1969
S. J. Cyvin   +7 more
openaire   +1 more source

Viscoelasticity‐Induced Controllable Periodic Meso‐Textures of Liquid Crystal Polymers in Additive Manufacturing

open access: yesAdvanced Functional Materials, EarlyView.
Viscoelasticity‐driven instabilities are harnessed to create tunable, periodic textures in 3D‐printed liquid crystalline polymers. This study illustrates how processing parameters control these spontaneous meso‐scale patterns. These unique structural architectures unlock new possibilities for functional devices, ranging from photonic components to ...
Miaomiao Zou   +17 more
wiley   +1 more source

Quasiperiodic Oscillations in a Highly Magnetized Ultracompact X-Ray Binary 4U 1626-67

open access: yesThe Astrophysical Journal
We report the detection of mHz quasiperiodic oscillations (QPOs) in four Nuclear Spectroscopic Telescope Array observations of 4U 1626–67 during its recent spin-down episode.
Zi-Yi Zhou   +5 more
doaj   +1 more source

Impact of Surface Functionalization on NV Quantum Properties: Implications for Biosensing with Fluorescent Nanodiamonds

open access: yesAdvanced Functional Materials, EarlyView.
Fluorescent nanodiamonds (fNDs) have emerged as an invaluable quantum sensing platform for biological and biochemical systems. This paper investigates the influence of common surface functionalization strategies for bioconjugation on the quantum properties of nitrogen vacancy (NV) centers in nanodiamonds.
Anja Sadžak   +6 more
wiley   +1 more source

Dual‐Functional Li2B4O7 Coating on Carbon Fibers for Enhanced Li+ Transport and Stability in Sulfide All‐Solid‐State Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A dual‐functional Li2B4O7 coating on carbon fibers is designed to resolve the critical interfacial degradation in sulfide all‐solid‐state batteries. The conformal layer acts as a physical barrier to suppress parasitic reactions while its unique dielectric properties simultaneously facilitate Li+ transport.
Yeonghoon Kim   +5 more
wiley   +1 more source

Mean Amplitudes of Vibration for 1,3-Butadiene from Spectroscopic Data. [PDF]

open access: yesActa Chemica Scandinavica, 1969
M. Trætteberg   +7 more
openaire   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

open access: yesAdvanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee   +5 more
wiley   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

True Random Number Generator for Robust Data Security via Intrinsic Stochasticity in a 2D hBN Threshold Switching Memristor

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate true random number generator (TRNG) circuits based on a 2D hBN threshold switching memristor integrated with passive components. Leveraging its intrinsic stochastic behavior, the spike generator produces output fluctuations directly converted into random bits via a comparator.
Yooyeon Jo   +5 more
wiley   +1 more source

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